Abstract: The present disclosure relates to medicament injection devices. An injection device includes: a movable dosage programming component comprising a rotary encoder system having a predefined angular periodicity, a sensor arrangement including a first optical sensor configured to detect movement of the movable dosage programming component relative to the sensor arrangement during dosing of a medicament, wherein the first optical sensor is configured to operate in a strobe-sampling mode at a first frequency, a second optical sensor configured to detect movement of the rotary encoder system relative to the second optical sensor wherein the second optical sensor is configured to operate in a strobe-sampling mode at a second frequency lower than the first frequency, and a processor arrangement configured to, based on the detected movement, determine a medicament dosage administered by the injection device.

Abstract: Information defining a first business information document, including a report element having a data provider and a variable, is received from a first user's device. The first document is saved in a central management system repository as a shared element, the shared element in the repository including an indication of the data provider and an indication of the variable. A request to access the shared element in the repository is then received from a second user's device. The shared element in the repository, including the indication of the data provider and the indication of the variable, are then incorporated within a second document for the second user. The shared element in the second document may be linked to the shared element in the repository such that a change to the shared element in the repository propagates to the shared element in the second document.

Abstract: We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7×1020 cm−3 can be attained in single crystal Si layers &dgr;-doped with a Group V element. In one embodiment, free-carrier concentrations in excess of about 2×1021 cm−3 are realized in single crystal Si that is &dgr;-doped with Sb. In another embodiment, the &dgr;-doped layer is formed as an integral part of an FET.