Patents by Inventor Anton C. Greenwald

Anton C. Greenwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6661875
    Abstract: The present invention provides a catheter having an x-ray generator unit at its tip which generates x-ray radiation having a wavelength in a range effective for treating biological tissue. In one embodiment, the x-ray generator unit includes a miniature x-ray generator and a miniature transformer that form, in combination, a monolithic device. The transformer includes a primary winding that receives an input voltage in a range of 100 V to 4 kV from a power source, via a flexible cable that runs from the proximal end of the catheter body to its distal end. The transformer further includes a secondary winding that up-converts the input voltage to generate an output voltage in a range of 10 kV to 40 kV to be applied to a cathode of the x-ray generator. The cathode emits electrons in response to the applied voltage, and an extraction electrode guides the emitted electrons to an anode, which is preferably formed of a high-Z refractory metal.
    Type: Grant
    Filed: May 9, 2002
    Date of Patent: December 9, 2003
    Assignee: Spire Corporation
    Inventors: Anton C. Greenwald, Ward D. Halverson
  • Publication number: 20030210765
    Abstract: The present invention provides a catheter having an x-ray generator unit at its tip which generates x-ray radiation having a wavelength in a range effective for treating biological tissue. In one embodiment, the x-ray generator unit includes a miniature x-ray generator and a miniature transformer that form, in combination, a monolithic device. The transformer includes a primary winding that receives an input voltage in a range of 100 V to 4 kV from a power source, via a flexible cable that runs from the proximal end of the catheter body to its distal end. The transformer further includes a secondary winding that up-converts the input voltage to generate an output voltage in a range of 10 kV to 40 kV to be applied to a cathode of the x-ray generator. The cathode emits electrons in response to the applied voltage, and an extraction electrode guides the emitted electrons to an anode, which is preferably formed of a high-Z refractory metal.
    Type: Application
    Filed: May 9, 2002
    Publication date: November 13, 2003
    Applicant: Spire Corporation
    Inventors: Anton C. Greenwald, Ward D. Halverson
  • Patent number: 6635559
    Abstract: The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
    Type: Grant
    Filed: September 6, 2001
    Date of Patent: October 21, 2003
    Assignee: Spire Corporation
    Inventors: Anton C. Greenwald, Nader Montazernezam Kalkhoran
  • Patent number: 5476826
    Abstract: A catalyst material of carbon black powder having nitrogen affixed to its surface and process for its production by contacting carbon black powder particles with a plasma or low energy beam of nitrogen containing ions affixing the nitrogen ions to the surface of the particles in a concentration of about 0.1 to about 10 percent, based upon the total number of surface atoms. The catalysts are particularly suited for use in phosphoric acid fuel cells.
    Type: Grant
    Filed: August 2, 1993
    Date of Patent: December 19, 1995
    Assignee: Gas Research Institute
    Inventors: Anton C. Greenwald, Vinod Jalan, deceased
  • Patent number: 5104690
    Abstract: A stream of gaseous source compounds and their ranges of relative ratios useful in the deposition of thin film ferroelectric materials by CVD are disclosed. The stream of gaseous source compounds are used in combination with a CVD reactor flushed with an inert gas and maintained at a predetermined internal pressure and, a substrate disposed within the CVD reactor and maintained at a predetermined temperature. The steam of gaseous source compounds include a Zr source compound, a Ti source compound, a Pb source compound, an oxidizing agent compound, and an inert gas, as well as their ranges of relative ratios to deposit lead-zirconate-titanate, related ferroelectrics, specifically including lead-lanthanum-zirconium-titanate.
    Type: Grant
    Filed: June 6, 1990
    Date of Patent: April 14, 1992
    Assignee: Spire Corporation
    Inventor: Anton C. Greenwald
  • Patent number: 5070026
    Abstract: An improved process of making a ferroelectric electronic component, such as a non-volatile RAM or an electro-optic switching array, is disclosed. The process essentially includes the separate formation of two subassemblies and then connecting them by placing one on top of the other. Electrical contacts are made by "bumping" or other "flip chip" techniques.
    Type: Grant
    Filed: June 26, 1989
    Date of Patent: December 3, 1991
    Assignee: Spire Corporation
    Inventors: Anton C. Greenwald, Bobby L. Buchanan