Abstract: Laminar structure comprising two outwardly facing metal layers with an interposed alternating layer sequence made up of n layers of a hydraulically cured inorganic cement composition and n?1 metal layers, where n=1, 2, or 3.

Abstract: A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, characterized in that an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).

Abstract: The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

Abstract: The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Abstract: A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.

Abstract: A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.

Abstract: A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.