Abstract: Methods, systems, and devices for data separation for garbage collection are described. A control component coupled to the memory array may identify a source block for a garbage collection procedure. In some cases, a first set of pages of the source block may be identified as a first type associated with a first access frequency and a second set of pages of the source block ay be identified as a second type associated with a second access frequency. Once the pages are identified as either the first type or the second type, the first set of pages may be transferred to a first destination block, and the second set of pages may be transferred to a second destination block as part of the garbage collection procedure.

Abstract: Methods and apparatuses are disclosed for executing a plurality of queued tasks in a memory. One example apparatus includes a memory configured to be coupled to a host. The memory is also configured to receive a plurality of memory access requests, a status request, and an execution command from the host, and to execute one or more of the plurality of memory access requests responsive to the execution command from the host. The execution command includes a plurality of respective indications that correspond to each respective memory access request of the plurality of memory access requests and that indicate whether the host is requesting the memory to execute each respective memory access request.

Abstract: A memory device comprises a memory array including multi-level memory cells, buffer circuitry, a memory control unit and a program progress indicator. The memory control unit is operatively coupled to the memory array and configured to load first data into the buffer circuitry and program the multi-level memory cells with the first data using multiple programming passes to program multiple programming levels. The program progress indicator is configured to indicate completion of a programming level as the programming of the multiple programming levels progresses. The memory control unit is further configured to load second data for programming of the multi-level memory cells according to an indication of completion of the program progress indicator.

Abstract: A memory device comprises a memory array including multi-level memory cells, buffer circuitry, a memory control unit and a program progress indicator. The memory control unit is operatively coupled to the memory array and configured to load first data into the buffer circuitry and program the multi-level memory cells with the first data using multiple programming passes to program multiple programming levels. The program progress indicator is configured to indicate completion of a programming level as the programming of the multiple programming levels progresses. The memory control unit is further configured to load second data for programming of the multi-level memory cells according to an indication of completion of the program progress indicator.

Abstract: Methods and apparatuses are disclosed for executing a plurality of queued tasks in a memory. One example apparatus includes a memory configured to be coupled to a host. The memory is also configured to receive a plurality of memory access requests, a status request, and an execution command from the host, and to execute one or more of the plurality of memory access requests responsive to the execution command from the host. The execution command includes a plurality of respective indications that correspond to each respective memory access request of the plurality of memory access requests and that indicate whether the host is requesting the memory to execute each respective memory access request.

Abstract: Methods and apparatuses are disclosed for executing a plurality of queued tasks in a memory. One example apparatus includes a memory configured to be coupled to a host. The memory is also configured to receive a plurality of memory access requests, a status request, and an execution command from the host, and to execute one or more of the plurality of memory access requests responsive to the execution command from the host. The execution command includes a plurality of respective indications that correspond to each respective memory access request of the plurality of memory access requests and that indicate whether the host is requesting the memory to execute each respective memory access request.

Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with multiple memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the multiple memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with a plurality of memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the plurality of the memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Methods and apparatuses are disclosed for executing a plurality of queued tasks in a memory. One example apparatus includes a memory configured to be coupled to a host. The memory is also configured to receive a plurality of memory access requests, a status request, and an execution command from the host, and to execute one or more of the plurality of memory access requests responsive to the execution command from the host. The execution command includes a plurality of respective indications that correspond to each respective memory access request of the plurality of memory access requests and that indicate whether the host is requesting the memory to execute each respective memory access request.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Read latencies in a memory array can be reduced by suspending write operations. In one example, a process includes, writing a first data set into a memory, interrupting a second memory write operation, and reading the first data set from the memory after interrupting the second memory write operation.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.