Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 ?m.

Abstract: Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q1-Q2 and Q3-Q4 are each independently —C(H)?C(H)— or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q1-Q2 and Q3-Q4 is (II).

Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 ?m.

Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

Abstract: The present teachings relate to novel polymeric materials for electrode treatment. The present polymeric electrode modifiers can be derived from an episulfide monomer via either an acid-catalyzed ring-opening polymerization reaction or a nucleophilic polymerization reaction.

Abstract: Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q1-Q2 and Q3-Q4 are each independently —C(H)?C(H)— or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q1-Q2 and Q3-Q4 is (II).

Abstract: The present teachings relate to novel polymeric materials for electrode treatment. The present polymeric electrode modifiers can be derived from an episulfide monomer via either an acid-catalyzed ring-opening polymerization reaction or a nucleophilic polymerization reaction.

Abstract: The invention relates to improved Organic Light Emitting Transistor (OLET) pixel architecture for OLET based displays.

Abstract: The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted benzo[d][1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.

Abstract: The present teachings relate to new organic semiconducting compounds and their use as active materials in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted dithieno[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present teachings relate to curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted dithieno[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted azino[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present teachings relate to hybrid organic-inorganic perovskite solar cells including a hole-transport layer in contact with the perovskite light-absorbing layer, where the hole-transport layer (HTL) is a pristine (undoped) polymer. More specifically, the HTL comprises a copolymer including a benzo[1,2-d;4,5-d?]bistriazole-containing repeating unit and a benzo[1,2-b:4,5-b?]dithiophene-containing repeating unit.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted thienothiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present teachings relate to organic semiconductor formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.

Abstract: Disclosed are curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.