Abstract: Back side connection layer for a photo-voltaic module comprising a plurality of PV-cells (i,j), the plurality PV-cells (i,j) being of a type having one or more back side contacts and divided in a preset number of strings (3) of series connected PV-cells (i. j). By-pass diodes are connectable in parallel to each of the preset number of strings (3), and three or more strings (3) are provided. The plurality of PV-cells (i,j) are positioned such that electrical connections to the first PV-cell and last PV-cell of each of the preset number of strings (3) are provided in a part of the back side connection layer overlapping a part of a two-by-two arrangement of PV-cells (i,j).

Abstract: Back side connection layer for a photo-voltaic module comprising a plurality of PV-cells (i,j), the plurality PV-cells (i,j) being of a type having one or more back side contacts and divided in a preset number of strings (3) of series connected PV-cells (i. j). By-pass diodes are connectable in parallel to each of the preset number of strings (3), and three or more strings (3) are provided. The plurality of PV-cells (i,j) are positioned such that electrical connections to the first PV-cell and last PV-cell of each of the preset number of strings (3) are provided in a part of the back side connection layer overlapping a part of a two-by-two arrangement of PV-cells (i,j).

Abstract: A photovoltaic cell includes a semiconductor substrate of a first conductivity type, with a first surface arranged with a highly doped surface field layer of the first conductivity type. The substrate has on the highly doped surface field layer at least one contacting area for contacting the surface field layer with a respective contact. In the first surface at the location of the at least one contacting area a doping concentration in the highly doped surface field layer is increased relative to the doping concentration in the surface area outside the first contacting area, and in the first surface at the location of each contacting area the highly doped surface field layer has a profile depth that is larger than a profile depth of the doped surface field layer outside the contacting area.

Abstract: A photo-voltaic cell, comprising a semi-conductor substrate, having a front surface and a back surface. Back surface field regions and emitter regions for collecting photo-current are provided, located alternatingly at the back surface of the substrate, at least one of the back surface field regions having a width of more than six hundred micrometer. A front floating emitter layer is provided at the front surface at least above said one of the back surface field regions, wherein the front floating emitter layer has an average electrical conductivity selected dependent on the width of said one of the back surface field regions.