Abstract: In the current invention a method for the preparation of an oxide material was described that involves bringing the sol onto the substrate, the gelation of the solution and thermal treatment of the gel. Alkoxides are used as precursor materials for the sol preparation and substrate free structures are employed for the manufacturing of the oxide material. A gel film with thickness ranging from 5 nm to 1 ?m is created onto the sol layer. The gelled film is separated into pieces by self organizing and the gelled part is disconnected from the substrate. Substrate free tubular structures with diameters ranging from 0.01-100 ?m are formed of the gel film which are then heated at temperature range of 200-1600 C during a period of 5 minutes to 10 hours. The manufactured oxide materials are employed as catalysts, gas sensors, stationary phases of chromatographic columns, composite materials, thermal isolation materials and micro- or nano electronic mechanical systems (MEMS or NEMS) components.

Abstract: In the current invention a method for the preparation of an oxide material was described that involves bringing the sol onto the substrate, the gelation of the solution and thermal treatment of the gel. Alkoxides are used as precursor materials for the sol preparation and substrate free structures are employed for the manufacturing of the oxide material. A gel film with thickness ranging from 5 nm to 1 ?m is created onto the sol layer. The gelled film is separated into pieces by self organizing and the gelled part is disconnected from the substrate. Substrate free tubular structures with diameters ranging from 0.01-100 ?m are formed of the gel film which are then heated at temperature range of 200-1600 C during a period of 5 minutes to 10 hours. The manufactured oxide materials are employed as catalysts, gas sensors, stationary phases of chromatographic columns, composite materials, thermal isolation materials and micro- or nano electronic mechanical systems (MEMS or NEMS) components.