Patents by Inventor Anup Kumar Singh
Anup Kumar Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996273Abstract: Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.Type: GrantFiled: October 21, 2020Date of Patent: May 28, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Vinayak Vishwanath Hassan, Bhaskar Kumar, Anup Kumar Singh
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Patent number: 11859275Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.Type: GrantFiled: January 3, 2019Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Vivek Bharat Shah, Anup Kumar Singh, Bhaskar Kumar, Ganesh Balasubramanian
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Publication number: 20230343586Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Applicant: Applied Materials, Inc.Inventors: Anup Kumar SINGH, Rick KUSTRA, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Krishna NITTALA, Pramit MANNA, Kaushik ALAYAVALLI, Ganesh BALASUBRAMANIAN
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Patent number: 11721545Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.Type: GrantFiled: September 28, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Anup Kumar Singh, Rick Kustra, Vinayak Vishwanath Hassan, Bhaskar Kumar, Krishna Nittala, Pramit Manna, Kaushik Comandoor Alayavalli, Ganesh Balasubramanian
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Patent number: 11545376Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.Type: GrantFiled: July 28, 2020Date of Patent: January 3, 2023Assignee: Applied Materials, Inc.Inventors: Sidharth Bhatia, Edward P. Hammond, IV, Bhaskar Kumar, Anup Kumar Singh, Vivek Bharat Shah, Ganesh Balasubramanian
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Patent number: 11495440Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.Type: GrantFiled: August 18, 2020Date of Patent: November 8, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Bhaskar Kumar, Prashanth Kothnur, Sidharth Bhatia, Anup Kumar Singh, Vivek Bharat Shah, Ganesh Balasubramanian, Changgong Wang
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Publication number: 20220349050Abstract: Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.Type: ApplicationFiled: April 25, 2022Publication date: November 3, 2022Inventors: Rick KUSTRA, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Sathya Swaroop GANTA, Anup Kumar SINGH
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Patent number: 11369962Abstract: Disclosed are devices and methods useful for confined-channel digital microfluidics that combine high-throughput droplet generators with digital microfluidic for droplet manipulation. The present disclosure also provides an off-chip sensing system for droplet tracking.Type: GrantFiled: October 26, 2015Date of Patent: June 28, 2022Assignee: National Technology & Engineering Solutions Of Sandia, LLCInventors: Jess M. Sustarich, Chao Chung Shih, Anup Kumar Singh, Philip Gach
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Publication number: 20220178026Abstract: A method includes flowing a carbon-containing precursor and a carrier gas into a processing volume having a substrate positioned therein, generating a plasma in the processing volume by applying a first RF bias to a substrate support to deposit a first portion of carbon film onto the substrate, and terminating flow of the carbon-containing precursor while maintaining flow of the carrier gas to maintain the plasma within the processing volume. The method also includes flowing a nitrogen-containing gas into the processing volume and ionizing the nitrogen-containing gas in the presence of the plasma, exposing the substrate having the carbon film thereon to the ionized nitrogen-containing gas for a time period less than three seconds, and terminating flow of the nitrogen-containing gas while maintaining the plasma and reintroducing the carbon-containing precursor into the processing volume in the presence of the plasma to deposit a second portion of the carbon film.Type: ApplicationFiled: December 3, 2020Publication date: June 9, 2022Inventors: Vinayak Vishwanath HASSAN, Anup Kumar SINGH, Bhaskar KUMAR
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Publication number: 20220178017Abstract: In one example, a method includes flowing a carbon-containing gas into a processing volume of a process chamber, the process chamber having internal surfaces comprising aluminum, and depositing a carbon film on the internal surfaces of the process chamber. The method also includes flowing fluorine radicals into the process chamber, and fluorinating the carbon film to create a CFx layer on the internal surfaces. The method also includes oxidizing the CFx layer on the internal surfaces creating an AlOCFx layer on the internal surfaces.Type: ApplicationFiled: December 3, 2020Publication date: June 9, 2022Inventors: Anup Kumar SINGH, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Ganesh BALASUBRAMANIAN
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Publication number: 20220122821Abstract: Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.Type: ApplicationFiled: October 21, 2020Publication date: April 21, 2022Inventors: Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Anup Kumar SINGH
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Publication number: 20220102141Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.Type: ApplicationFiled: September 28, 2020Publication date: March 31, 2022Inventors: Anup Kumar SINGH, Rick KUSTRA, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Krishna NITTALA, Pramit MANNA, Kaushik Comandoor ALAYAVALLI, Ganesh BALASUBRAMANIAN
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Publication number: 20220064797Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.Type: ApplicationFiled: August 16, 2021Publication date: March 3, 2022Inventors: Akshay DHANAKSHIRUR, Juan Carlos ROCHA-ALVAREZ, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Rick KUSTRA, Badri N. RAMAMURTHI, Anup Kumar SINGH, Ganesh BALASUBRAMANIAN, Bhaskar KUMAR, Vinayak Vishwanath HASSAN, Canfeng LAI, Kallol BERA, Sathya Swaroop GANTA
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Patent number: 11120976Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.Type: GrantFiled: July 13, 2020Date of Patent: September 14, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bhaskar Kumar, Anup Kumar Singh, Vivek Bharat Shah, Sidharth Bhatia, Ganesh Balasubramanian
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Publication number: 20210205813Abstract: Disclosed herein include systems, devices, and methods for generating and directly loading droplets onto a microfluidic device with contactless delivery. Droplets can be generated and loaded onto a sealed microfluidic device through one or more connecting ports. Loaded droplets can be manipulated, such as merged.Type: ApplicationFiled: December 22, 2020Publication date: July 8, 2021Inventors: Kosuke Iwai, Jess Sustarich, William Randy Gaillard, Anup Kumar Singh
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Publication number: 20210108309Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.Type: ApplicationFiled: January 3, 2019Publication date: April 15, 2021Inventors: Vivek Bharat SHAH, Anup Kumar SINGH, Bhaskar KUMAR, Ganesh BALASUBRAMANIAN
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Patent number: 10892143Abstract: Implementations of the present disclosure provide methods for treating a processing chamber. In one implementation, the method includes purging a 300 mm substrate processing chamber, without the presence of a substrate, by flowing a purging gas into the substrate processing chamber at a flow rate of about 0.14 sccm/mm2 to about 0.33 sccm/mm2 and a chamber pressure of about 1 Torr to about 30 Torr, with a throttle valve of a vacuum pump system of the substrate processing chamber in a fully opened position, wherein the purging gas is chemically reactive with deposition residue on exposed surfaces of the substrate processing chamber.Type: GrantFiled: September 28, 2017Date of Patent: January 12, 2021Assignee: Applied Materials, Inc.Inventors: Vivek Bharat Shah, Bhaskar Kumar, Anup Kumar Singh, Ganesh Balasubramanian
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Publication number: 20200381222Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.Type: ApplicationFiled: August 18, 2020Publication date: December 3, 2020Inventors: Bhaskar KUMAR, Prashanth KOTHNUR, Sidharth BHATIA, Anup Kumar SINGH, Vivek Bharat SHAH, Ganesh BALASUBRAMANIAN, Changgong WANG
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Publication number: 20200357668Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.Type: ApplicationFiled: July 28, 2020Publication date: November 12, 2020Inventors: Sidharth BHATIA, Edward P. HAMMOND, IV, Bhaskar KUMAR, Anup Kumar SINGH, Vivek Bharat SHAH, Ganesh BALASUBRAMANIAN
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Publication number: 20200350146Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.Type: ApplicationFiled: July 13, 2020Publication date: November 5, 2020Inventors: Bhaskar KUMAR, Anup Kumar SINGH, Vivek Bharat SHAH, Sidharth BHATIA, Ganesh BALASUBRAMANIAN