Abstract: A method of fabricating a film vibration device, including: photoetching a surface of a silicon wafer to form a circular-hole array; etching an aluminum layer on the silicon wafer; etching the silicon wafer to form a through-hole array to obtain a porous silicon wafer; attaching a polyethylene terephthalate (PET) sheet to a side of the porous silicon wafer; ablating the PET sheet to obtain a porous PET film; attaching a polyvinylidene fluoride (PVDF) film to a lower side of the porous silicon wafer; performing vacuumization above the porous silicon wafer, while heating the PVDF film below the porous silicon wafer to create dome micro-structures on the PVDF film; and laminating the porous PET film on each of two sides of the PVDF film to obtain the film vibration device. This application also provides a cleaning device having the film vibration device.

Abstract: A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.

Abstract: A core-shell coaxial gallium nitride piezoelectric nanogenerator includes a core-shell coaxial gallium nitride nanowire array and a flexible substrate. A first conductive layer is provided on a surface of the flexible substrate. The core-shell coaxial gallium nitride nanowire array is fixed to the flexible substrate. A top end of the core-shell coaxial gallium nitride nanowire array is provided with a second conductive layer. The first conductive layer and the second conductive layer are both connected to an external circuit via a wire. A nanowire of the core-shell coaxial gallium nitride nanowire array is covered with an alumina layer. A method for preparing the core-shell coaxial gallium nitride piezoelectric nanogenerator is further provided. The gallium nitride nanowire array is formed by electrodeless photoelectrochemical etching.

Abstract: A method of fabricating a film vibration device, including: photoetching a surface of a silicon wafer to form a circular-hole array; etching an aluminum layer on the silicon wafer; etching the silicon wafer to form a through-hole array to obtain a porous silicon wafer; attaching a polyethylene terephthalate (PET) sheet to a side of the porous silicon wafer; ablating the PET sheet to obtain a porous PET film; attaching a polyvinylidene fluoride (PVDF) film to a lower side of the porous silicon wafer; performing vacuumization above the porous silicon wafer, while heating the PVDF film below the porous silicon wafer to create dome micro-structures on the PVDF film; and laminating the porous PET film on each of two sides of the PVDF film to obtain the film vibration device. This application also provides a cleaning device having the film vibration device.