Abstract: A novel pad-in-a-bottle (PIB) technology for advanced chemical-mechanical planarization (CMP) Copper or THROUGH-SILICON VIA (TSV) CMP compositions, systems and processes has been disclosed. The role of conventional polishing pad asperities is played by high-quality micron-size polyurethane (PU) beads that are comparable to the sizes of pores and asperities in polishing pads.

Abstract: In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

Abstract: Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.

Abstract: In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

Abstract: Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.

Abstract: The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.

Abstract: A method and apparatus for performing chemical-mechanical planarization (CMP) is disclosed, which in one embodiment includes a CMP tool for polishing a semiconductor wafer. The CMP tool includes a slurry mixture that has slurry beads. The slurry beads are formed of a polymer material. The slurry beads are used to remove summits and non-uniformities on the semiconductor wafer. In some embodiments the CMP tool includes a counter-face that replaces the polishing pad of a conventional CMP tool. In some embodiments the counter-face is made of polycarbonate. In another embodiment a slurry mixture for use with a CMP tool is disclosed. The slurry mixture includes slurry beads, where each of the slurry beads has a diameter of between 0.1 and 1000 microns, or in some embodiments a diameter of between 10 and 50 microns.

Abstract: The present invention is a method for obtaining data easily, accurately and effectively that may be used in determination of Sommerfeld Numbers and COF for CMP polishing. Using the Sommerfeld Numbers and COF values thus obtained the lubrication mechanism of CMP polishing with particular materials and under particular conditions can easily and reliably be studied. The method of the present invention is accomplished by use of CMP polishing tools capable of simultaneously measuring shear force and normal force, and rendering a value for the COF while simultaneously enabling the operator to change pressure on and relative velocity of the CMP wafer and CMP polishing pad in real time. Using the said CMP tool, the pressure and relative velocity may be varied separately or together for the desired length of time according to the needs of the operator so that within one CMP process multiple measurements may be taken under the same process conditions.

Abstract: [Problem] To improve polishing efficiency while lowering shear force added to semiconductor wafers while increasing polishing speed, without damaging the wafer's processing surface or the membrane under it. [Solution Method] Pressing the revolving head or carrier 34 that holds fixed the semiconductor wafer 10 to the polishing pad or polishing cloth 30 attached to rotating polishing table 32 in this CMP device and while rotating carrier 34 and polishing table 32 respectively, and supplying liquid slurry to polishing pad 30 from nozzle 36, planarization by chemical processes and mechanical processes is carried out by removing membranes of the lower face of semiconductor wafer 10 (the processing surface). The chemical mechanical polishing process of the present invention in regard to the size of the relationship between the rotation rate of semiconductor wafer 10 fW and the number of rotations of polishing pad 30 fP has 3 fp<fW as its lower limit and 4 fp<fW<8 fp is ideal conditions.

Abstract: A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to t

Abstract: The present invention is a method and apparatus for accelerated pulling and fracturing of aggressive diamonds on a CMP diamond conditioner disc wherein aggressive diamonds of known position are pulled or fractured by contacting the diamond conditioner disc to a plate or sheet of a hard material or a plate or sheet containing discrete structures of hard material relative to which the diamond disc is in motion at a determinable and reproducible rate for a determinable and reproducible period of time and the number and position of the pulled or fractured aggressive diamonds are determined following the completion of said contact.

Abstract: The present invention is a method for determining the location of and distinguishing aggressive diamonds from active diamonds on a diamond conditioner disc, comprising: (a) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (b) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (c) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, and (d) selecting the diamonds, the marks for which are the most pronounced and which comprise 50% or more of the total furrow area observed for all of the active diamonds in descending order of furrow are plus any diamonds in excess of the number needed to achieve said 50% or more whose individua

Abstract: A method of determining pattern evolution of a semiconductor wafer during chemical mechanical polishing prior to polishing end point by determining the periodic change in the variance and FT or FFT frequency spectra of shear force and change in variance and FT or FFT frequency spectra of COF, shear force and/or down force between the semiconductor wafer and the polishing pad.

Abstract: The present invention is a planar template for a CMP tool polishing head possessing a means of securing a wafer in CMP polishing where the back surface of the template is held to the polishing head by retaining means and a method for using the planar template.

Abstract: The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.

Abstract: A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof.

Abstract: A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method.

Abstract: The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a polishing cloth fixed on a revolving polishing table and supplying a polishing slurry to the space between the polishing cloth and the semiconductor substrate, wherein the end point of polishing is determined according to the change in the friction coefficient while the friction coefficient between the semiconductor substrate and the polishing cloth is measured. According to the present invention it is possible to measure friction coefficient accurately in polishing a semiconductor substrate and use the change thereof to determine the end point of polishing.

Abstract: The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

Abstract: The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.