Abstract: A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.

Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.

Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.