Abstract: A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.

Abstract: A semiconductor device and a method of making thereof are disclosed. The device includes a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type formed on the substrate. A buffer layer between the substrate and the epitaxial layer is doped with the first conductivity type at a doping level between that of the substrate and that of the epitaxial layer. A cell includes a body region doped with the second conductivity formed in the epitaxial layer. The second conductivity type is opposite the first conductivity type. The cell includes a source region doped with the first conductivity type and formed in at least the body region. The device further includes a short region doped with the second conductivity type formed in the epitaxial layer separated from source region of the cell by the body region of the cell wherein the short region is conductively coupled with the source region.

Abstract: A semiconductor device and a method of making thereof are disclosed. The device includes a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type formed on the substrate. A buffer layer between the substrate and the epitaxial layer is doped with the first conductivity type at a doping level between that of the substrate and that of the epitaxial layer. A cell includes a body region doped with the second conductivity formed in the epitaxial layer. The second conductivity type is opposite the first conductivity type. The cell includes a source region doped with the first conductivity type and formed in at least the body region. The device further includes a short region doped with the second conductivity type formed in the epitaxial layer separated from source region of the cell by the body region of the cell wherein the short region is conductively coupled with the source region.

Abstract: A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.

Abstract: A medical device for performing a surgical procedure on a patient including an elongate tubular shaft having an outer surface extending from a proximal end to a distal end and an inner passage in fluid communication with a fluid source during use of the device. The shaft further has a lateral hole in the outer surface in fluid communication with the inner passage for delivering fluid from the device in a lateral direction during surgery. The device further includes a distal balloon having an exterior surface connected to the shaft and a projection extending from the exterior surface. The device also includes a proximal balloon connected to the shaft between the distal end and the proximal end of the shaft and a locating structure connected to the shaft. The hole is positioned in the outer surface between the distal balloon and the proximal balloon.

Abstract: A medical device for performing a surgical procedure on a patient including an elongate tubular shaft having an outer surface extending from a proximal end to a distal end and an inner passage in fluid communication with a fluid source during use of the device. The shaft further has a lateral hole in the outer surface in fluid communication with the inner passage for delivering fluid from the device in a lateral direction during surgery. The device further includes a distal balloon having an exterior surface connected to the shaft and a projection extending from the exterior surface. The device also includes a proximal balloon connected to the shaft between the distal end and the proximal end of the shaft and a locating structure connected to the shaft. The hole is positioned in the outer surface between the distal balloon and the proximal balloon.