Patents by Inventor Aric K. Menon

Aric K. Menon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High capacity MRAM memory array architecture
    Patent number: 6873547
    Abstract: A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: March 29, 2005
    Assignee: Read Rite Corporation
    Inventors: Xizeng(Stone) Shi, Hua-Ching Tong, Aric K. Menon