Patents by Inventor Arifuzzaman (Arif) Sheikh

Arifuzzaman (Arif) Sheikh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-K metal gate device
    Patent number: 8853796
    Abstract: A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: October 7, 2014
    Assignees: GLOBALFOUNDIERS Singapore Pte. Ltd.
    Inventors: Young Way Teh, Michael V. Aquilino, Arifuzzaman (Arif) Sheikh, Yun Ling Tan, Hao Zhang, Deleep R. Nair, Jinghong H. (John) Li
  • Integrated circuit system with reduced polysilicon residue and method of manufacture thereof
    Patent number: 8642475
    Abstract: A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: February 4, 2014
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd., International Business Machines Corporation
    Inventors: Xiang Hu, Helen Wang, Arifuzzaman (Arif) Sheikh, Habib Hichri, Richard Wise
  • HIGH-K METAL GATE DEVICE
    Publication number: 20120292719
    Abstract: A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.
    Type: Application
    Filed: May 19, 2011
    Publication date: November 22, 2012
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Young Way TEH, Michael V. AQUILINO, Arifuzzaman (Arif) SHEIKH, Yun Ling TAN, Hao ZHANG, Deleep R. NAIR, Jinghong H. (John) LI
  • INTEGRATED CIRCUIT SYSTEM WITH REDUCED POLYSILICON RESIDUE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20120153474
    Abstract: A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 21, 2012
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Xiang Hu, Helen Wang, Arifuzzaman (Arif) Sheikh, Habib Hichri, Richard Wise