Abstract: A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); andnanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.

Abstract: Disclosed is a printhead having at least one ink drop generator region, which includes an ink chamber, an orifice through which ink drops are ejected, and a heating element positioned below the ink chamber. The heating element includes a resistor defined therein and a nano-structured surface that is exposed to the ink fluid supplied to the ink chamber. The nano-structured surface takes the form of an array of nano-pillars. The printhead is fabricated by a method that includes: forming a heating element having an oxidizable metal layer as the uppermost layer; forming an aluminum-containing layer on the oxidizable metal layer; anodizing the aluminum-containing layer to form porous alumina; anodizing the oxidizable metal layer so as to partially fill the pores in the porous alumina with metal oxide material; and removing the porous alumina by selective etching to produce a nano-structured surface.

Abstract: A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); and nanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.

Abstract: Disclosed is a printhead having at least one ink drop generator region, which includes an ink chamber, an orifice through which ink drops are ejected, and a heating element positioned below the ink chamber. The heating element includes a resistor defined therein and a nano-structured surface that is exposed to the ink fluid supplied to the ink chamber. The nano-structured surface takes the form of an array of nano-pillars. The printhead is fabricated by a method that includes: forming a heating element having an oxidizable metal layer as the uppermost layer; forming an aluminum-containing layer on the oxidizable metal layer; anodizing the aluminum-containing layer to form porous alumina; anodizing the oxidizable metal layer so as to partially fill the pores in the porous alumina with metal oxide material; and removing the porous alumina by selective etching to produce a nano-structured surface.

Abstract: A fluid ejector head is manufactured. Sidewalls of at least one fluid ejection chamber are defined about at least one fluid drop generator disposed over a substrate. At least one bore is created over the at least one fluid ejection chamber. The at least one bore has a first nozzle surface proximate to the at least one fluid ejection chamber, and a second nozzle surface distal to the at least one fluid ejection chamber. An initial deposit of a protective layer material is deposited at a low substrate bias voltage through the at least one bore. A portion of the initial deposit of the protective layer material is redistributed on the sidewalls at a high substrate bias voltage. An inorganic protective layer is formed on the sidewalls of the at least one fluid ejection chamber and on a portion of the first nozzle surface.

Abstract: A cavitation structure for a print head has a first dielectric layer overlying at least a first portion of a substrate. A second dielectric layer has a first portion overlying at least a second portion of the substrate and a second portion, different from the first portion of the second dielectric layer, overlying at least a portion of the first dielectric layer. A cavitation layer has a first portion in contact with the first dielectric layer and a second portion in lateral contact with the second portion of the second dielectric layer. A third dielectric layer is disposed on only the first portion of the second dielectric layer.

Abstract: A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.

Abstract: A display system includes a housing having at least one optical window and at least one charge-controlled spatial light-modulator disposed within the housing. The at least one spatial light-modulator is configured to project an image-bearing light beam to a viewing surface through the at least one optical window. The system further includes at least one electron gun selectively positioned at a predetermined angle with respect to the at least one spatial light-modulator. The electron gun is configured to project an electron beam into the housing to impinge a front surface of the at least one spatial light-modulator.

Abstract: A method of forming a fluid ejection device is disclosed. The steps of forming the fluid ejection device may include forming a heating element on a substrate. The steps for forming the fluid ejection device may further include depositing a buffer layer over the heating element, and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer.

Abstract: An apparatus to retain an assembled component on one side of a double-sided printed circuit board during reflow of other components subsequently positioned on an opposite side of the double-sided printed circuit board and methods for manufacturing and using the same. The retainer includes a heat-shrinkable member and a retaining member. Being formed from a heat-shrinkable material, the heat-shrinkable member is configured to receive a post extending through an opening formed in a double-sided printed circuit board from a component previously assembled on one side thereof. The retaining member is coupled with the heat-shrinkable member, and the double-sided printed circuit board is disposed substantially between the retaining member and the component. The heat-shrinkable member is configured to shrinkably engage the post when an opposite side of the double-sided printed circuit board is populated and reflowed, retaining the inverted component on the double-sided printed circuit board.

Abstract: A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.

Abstract: Atomic layer deposition forms a cavitation layer of a print head.

Abstract: Atomic layer deposition forms a cavitation layer of a print head.

Abstract: A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

Abstract: A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.

Abstract: A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.

Abstract: A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.

Abstract: A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

Abstract: A fluid ejection device is disclosed. The fluid ejection device may include a substrate including a heating element and a passivation layer in contact with the heating element. The fluid ejection device may further include a buffer layer in contact with the passivation layer and a compressive alpha-tantalum layer in contact with, and lattice matched to, the buffer layer.

Abstract: The invention includes a method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas. The method of the present invention may include selecting a pressure of nitrogen residual gas during plasma sputtering corresponding to a predefined ratio of beta- to alpha-tantalum. The method may be performed at substrate temperatures less than 300° C. Mixed-phase compressive tantalum thin films and fluid ejection devices are also disclosed.