Patents by Inventor Arkaprava Dan
Arkaprava Dan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11823870Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.Type: GrantFiled: August 11, 2020Date of Patent: November 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Hanhong Chen, Arkaprava Dan, Joseph AuBuchon, Kyoung Ha Kim, Philip A. Kraus
-
Patent number: 11791190Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.Type: GrantFiled: May 7, 2021Date of Patent: October 17, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Tejas Ulavi, Arkaprava Dan, Mike Murtagh, Sanjeev Baluja
-
Patent number: 11791172Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A valve upstream of a shared volume is controlled by at least two pressurizing sequences during a process it the processing chamber. The first pressurizing sequence opens and closes the upstream valve a first number of cycles and the second pressurizing sequence opens and closes the upstream valve less frequently after the first number of cycles. The open/close timing of the second pressurizing sequence occurs less frequently than the open/close timing of the first pressurizing sequence.Type: GrantFiled: June 18, 2020Date of Patent: October 17, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Mauro Cimino, Arkaprava Dan, Paul Z. Wirth
-
Publication number: 20230295803Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.Type: ApplicationFiled: April 14, 2023Publication date: September 21, 2023Applicant: Applied Materials, Inc.Inventors: Haoming Yan, Shih Chung Chen, Mandyam Sriram, EunKee Hong, Janardhan Devrajan, Lakmal C. Kalutarage, Yongjing Lin, Lisa Michelle Mandrell, Arkaprava Dan
-
Publication number: 20230253186Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.Type: ApplicationFiled: April 11, 2023Publication date: August 10, 2023Applicant: APPLIED MATERIALS, INC.Inventors: Hanhong CHEN, Arkaprava DAN, Joseph AUBUCHON, Kyoung Ha KIM, Philip A. KRAUS
-
Publication number: 20230245925Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.Type: ApplicationFiled: March 24, 2023Publication date: August 3, 2023Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
-
Patent number: 11646226Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.Type: GrantFiled: May 11, 2020Date of Patent: May 9, 2023Assignee: Applied Materials, Inc.Inventors: Wenyi Liu, Wei Tang, Srinivas Gandikota, Yixiong Yang, Yong Wu, Jianqiu Guo, Arkaprava Dan, Mandyam Sriram
-
Patent number: 11623253Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: GrantFiled: January 24, 2022Date of Patent: April 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
-
Publication number: 20230071431Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.Type: ApplicationFiled: September 3, 2021Publication date: March 9, 2023Inventors: Mauro Cimino, Arkaprava Dan, Sanjeev Baluja
-
Patent number: 11599069Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.Type: GrantFiled: September 3, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Mauro Cimino, Arkaprava Dan, Sanjeev Baluja
-
Publication number: 20220152668Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: January 24, 2022Publication date: May 19, 2022Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
-
Patent number: 11260432Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: GrantFiled: September 18, 2020Date of Patent: March 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
-
Patent number: 11220747Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.Type: GrantFiled: October 21, 2019Date of Patent: January 11, 2022Assignee: Applied Materials, Inc.Inventors: Joseph AuBuchon, Sanjeev Baluja, Michael Rice, Arkaprava Dan, Hanhong Chen
-
Publication number: 20210398823Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A valve upstream of a shared volume is controlled by at least two pressurizing sequences during a process it the processing chamber. The first pressurizing sequence opens and closes the upstream valve a first number of cycles and the second pressurizing sequence opens and closes the upstream valve less frequently after the first number of cycles. The open/close timing of the second pressurizing sequence occurs less frequently than the open/close timing of the first pressurizing sequence.Type: ApplicationFiled: June 18, 2020Publication date: December 23, 2021Applicant: Applied Materials, Inc.Inventors: Mauro Cimino, Arkaprava Dan, Paul Z. Wirth
-
Publication number: 20210351060Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.Type: ApplicationFiled: May 7, 2021Publication date: November 11, 2021Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Mike Murtagh, Sanjeev Baluja
-
Publication number: 20210351071Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
-
Publication number: 20210086239Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
-
Publication number: 20210087681Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Joseph AuBuchon, Sanjeev Baluja, Michael Rice, Arkaprava Dan, Hanhong Chen
-
Publication number: 20210050186Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.Type: ApplicationFiled: August 11, 2020Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Hanhong Chen, Arkaprava Dan, Joseph AuBuchon, Kyoung Ha Kim, Philip A. Kraus
-
Publication number: 20200131636Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.Type: ApplicationFiled: October 21, 2019Publication date: April 30, 2020Inventors: Joseph AuBuchon, Sanjeev Baluja, Michael Rice, Arkaprava Dan, Hanhong Chen