Abstract: The invention comprises a segmented rolling floor apparatus and method of use thereof, such as for use in a charged particle cancer therapy system. The segmented rolling floor comprises a first spool and a second spool, attached to opposite ends of the rolling floor, which cooperatively wind and unwind the rolling floor. The segmented rolling floor circumferentially surrounds a nozzle system penetrating through an aperture in the segmented rolling floor, where the nozzle system is used to deliver charged particles, from an accelerator, to a tumor of a patient. The rolling floor and nozzle systems move at respective rates maintaining the nozzle system in the aperture allowing for a safe/walkable floor while allowing treatment of the tumor as a gantry rotates the nozzle system and delivers protons to the tumor from positions above and below the floor.

Abstract: The invention comprises a segmented rolling floor apparatus and method of use thereof, such as for use in a charged particle cancer therapy system. The segmented rolling floor comprises a first spool and a second spool, attached to opposite ends of the rolling floor, which cooperatively wind and unwind the rolling floor. The segmented rolling floor circumferentially surrounds a nozzle system penetrating through an aperture in the segmented rolling floor, where the nozzle system is used to deliver charged particles, from an accelerator, to a tumor of a patient. The rolling floor and nozzle systems move at respective rates maintaining the nozzle system in the aperture allowing for a safe/walkable floor while allowing treatment of the tumor as a gantry rotates the nozzle system and delivers protons to the tumor from positions above and below the floor.

Abstract: The invention comprises a segmented rolling floor apparatus and method of use thereof, such as for use in a charged particle cancer therapy system. The segmented rolling floor comprises a first spool and a second spool, attached to opposite ends of the rolling floor, which cooperatively wind and unwind the rolling floor. The segmented rolling floor circumferentially surrounds a nozzle system penetrating through an aperture in the segmented rolling floor, where the nozzle system is used to deliver charged particles, from an accelerator, to a tumor of a patient. The rolling floor and nozzle systems move at respective rates maintaining the nozzle system in the aperture allowing for a safe/walkable floor while allowing treatment of the tumor as a gantry rotates the nozzle system and delivers protons to the tumor from positions above and below the floor.

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece.

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece.

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers.

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers.

Abstract: A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion.

Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

Abstract: A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion.

Abstract: An apparatus for treating a workpiece, the apparatus comprising a first chamber configured to treat the workpiece at an elevated temperature, the first chamber including an opening for receiving the workpiece; a second chamber in operative communication with the first chamber, the second chamber including an opening for transferring the workpiece to and from the first chamber, wherein the first chamber opening is aligned with the second chamber opening, and wherein a selected one of the first and the second chambers comprises a gate valve configured to selectively open and close access to the first and second chamber openings; and a thermal isolation plate formed of a material effective to substantially prevent heat transfer from the first chamber to the second chamber, wherein the thermal isolation plate is disposed about the first and second chamber openings in a sealing relationship.

Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.