Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.

Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.

Abstract: A method for chemically passivating a surface of a product made of a III-V semiconductor material in which a) a P(N) polymer film is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition, without electrochemical assistance, in the solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface.

Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterized in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract: The invention relates to novel nanoparticles comprising a metal core containing at least one platinoid or an alloy of a platinoid, a first organic coating formed from molecules attached to the surface of the metal core, and a second organic coating formed from molecules different from the molecules forming the first organic coating, and which are grafted onto molecules of the first organic coating. The invention also relates to the use of the nanoparticles as catalysts. The fields of application include devices for producing electrical energy, in particular in fuel cells, devices for detecting or assaying one or more chemical or biological species, in particular in sensors or multisensors, etc.

Abstract: The invention relates to the use of nanoparticles comprising a metal core containing at least one platinoid or an alloy of a platinoid, a first organic coating formed from molecules attached to the surface of the metal core and a second organic coating formed from molecules different from the molecules forming the first organic coating, and which are grafted onto molecules of the first organic coating, as catalysts. The invention also relates to novel nanoparticles that are useful as catalysts. The fields of application: devices for producing electrical energy, in particular in fuel cells, devices for detecting or assaying one or more chemical or biological species, in particular in sensors or multisensors, etc.

Abstract: Method for deoxidizing and passivating, by sulphidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulphide ions with a concentration of between about 10−1M and 10−7M.

Abstract: Method for deoxidizing and passivating, by sulfidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulfide ions with a concentration of between about 10−1M and 10−7M.