Abstract: A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

Abstract: A method for manufacturing a turbomachine blade made of ceramic matrix composite component includes at least a structural part and a functional part secured to the structural part, the method including obtaining an assembly including a first preform of the functional part that is mounted on a second preform of the structural part or on the structural part, the first preform including a fibrous reinforcement of short fibres, and the second preform or the structural part comprising a woven fibrous reinforcement, and densification of the first preform of the assembly by infiltration with a molten composition.

Abstract: Unmanned aerial vehicle (UAV) including an inner frame, an inner flight propulsion system mounted on the inner frame, an outer frame, a gimbal system comprising at least two rotational couplings coupling the inner propulsion system to the outer frame, a control system, a power source, and an outer frame actuation system configured to actively orient the outer frame with respect to the inner frame.

Abstract: Unmanned aerial vehicle (UAV) including a flight propulsion system and a support system coupled to the flight propulsion system, the support system comprising a protective outer cage configured to surround the flight propulsion system, wherein the outer cage comprises a plurality of cage frame modules that are manufactured as separate components and assembled together to form at least a portion of the outer cage configured to surround the flight propulsion system.

Abstract: A serigraphy method for producing a soulder bump on the front surface of a substrate includes: forming a film on the front surface, forming an opening in the film, filling the opening with a souldering material, and removing the film. Forming a film on the front surface is preceded by the formation of an intermediate layer between the film and the front surface, the intermediate layer being adapted to exhibit a force of adherence at one and/or the other interface formed with the first front surface and the film lower than the force of adherence that can be formed between the film and the first front surface.

Abstract: A serigraphy method for producing a soulder bump on the front surface of a substrate includes: forming a film on the front surface, forming an opening in the film, filling the opening with a souldering material, and removing the film. Forming a film on the front surface is preceded by the formation of an intermediate layer between the film and the front surface, the intermediate layer being adapted to exhibit a force of adherence at one and/or the other interface formed with the first front surface and the film lower than the force of adherence that can be formed between the film and the first front surface.

Abstract: Unmanned aerial vehicle (UAV) including an inner frame, an inner flight propulsion system mounted on the inner frame, an outer frame, a gimbal system comprising at least two rotational couplings coupling the inner propulsion system to the outer frame, a control system, a power source, and an outer frame actuation system configured to actively orient the outer frame with respect to the inner frame.

Abstract: Unmanned aerial vehicle (UAV) including a flight propulsion system and a support system coupled to the flight propulsion system, the support system comprising a protective outer cage configured to surround the flight propulsion system, wherein the outer cage comprises a plurality of cage frame modules that are manufactured as separate components and assembled together to form at least a portion of the outer cage configured to surround the flight propulsion system.

Abstract: A VTOL (vertical take-off and landing) aerial flying vehicle comprising an inner frame, a gimbal system and an outer frame, the inner frame comprising a propulsion system and a control system. The propulsion system being able to generate a lift force. The VTOL may also include a decoupling mechanism having either a linear or non-linear beam coupled to a ring. The beam may optionally include sliders at ends thereof that provide an additional rotation freedom to the inner frame.

Abstract: A VTOL (vertical take-off and landing) aerial flying vehicle comprising an inner frame, a gimbal system and an outer frame, the inner frame comprising a propulsion system and a control system. The propulsion system being able to generate a lift force. The VTOL may also include a decoupling mechanism having either a linear or non-linear beam coupled to a ring. The beam may optionally include sliders at ends thereof that provide an additional rotation freedom to the inner frame.

Abstract: A sealing method between two elements includes producing a first sealing material on a face of a first of the two elements, producing a second sealing material, different from the first sealing material, on one face of a second of the two elements, securing the two elements by thermocompression of the sealing materials against each other at a temperature Tc below the melting temperatures of the first and second sealing materials, the first and second sealing materials are chosen such that they each have at least one phase able to react with the phase of the other sealing material by interdiffusion of the components of the phases of the sealing materials during the securing step and forming at least one other solid phase having a melting temperature above the temperature Tc.

Abstract: A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of He+ helium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the “c” crystallographic axis of the material, at an implantation dose equal to or greater than 1×1016 He+/cm2 and 1×1017 He+/cm2, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.

Abstract: A sealing method between two elements, including the following steps: producing a first sealing material on a face of a first of said two elements, producing a second sealing material, different from the first sealing material, on one face of a second of said two elements, securing said two elements by thermocompression of the sealing materials against each other at a temperature Tc below the melting temperatures of the first and second sealing materials, wherein the first and second sealing materials are chosen such that they each have at least one phase able to react with the phase of the other sealing material by interdiffusion of the components of the phases of the sealing materials during the securing step and forming at least one other solid phase having a melting temperature above the temperature Tc.

Abstract: A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of He+ helium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the “c” crystallographic axis of the material, at an implantation dose equal to or greater than 1×1016 He+/cm2 and 1×1017 He+/cm2, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.

Abstract: A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

Abstract: A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.