Patents by Inventor Arnaud Morlier

Arnaud Morlier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9771654
    Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: September 26, 2017
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Patent number: 8963345
    Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: February 24, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Publication number: 20140234602
    Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.
    Type: Application
    Filed: September 24, 2012
    Publication date: August 21, 2014
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Publication number: 20130001808
    Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.
    Type: Application
    Filed: December 9, 2010
    Publication date: January 3, 2013
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier