Patents by Inventor Arnd ten Have
Arnd ten Have has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9435699Abstract: The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12,14,16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12,14,16) using process steps of a conventional method for producing integrated electronic components. A component element (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12,14,16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12,14,16) and/or in case of etching of a material layer (52) disposed on the material substrate (12,14,16).Type: GrantFiled: April 17, 2015Date of Patent: September 6, 2016Assignee: ELMOS Semiconductor AGInventor: Arnd Ten-Have
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Patent number: 9403676Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1,5), in the upper face of which an active region (78a,200) made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a,200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type.Type: GrantFiled: February 13, 2015Date of Patent: August 2, 2016Assignee: ELMOS Semiconductor AGInventor: Arnd Ten Have
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Publication number: 20150219507Abstract: The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12,14,16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12,14,16) using process steps of a conventional method for producing integrated electronic components. A component element (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12,14,16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12,14,16) and/or in case of etching of a material layer (52) disposed on the material substrate (12,14,16).Type: ApplicationFiled: April 17, 2015Publication date: August 6, 2015Inventor: Arnd Ten-Have
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Publication number: 20150158717Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1,5), in the upper face of which an active region (78a,200) made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a,200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type.Type: ApplicationFiled: February 13, 2015Publication date: June 11, 2015Inventor: Arnd Ten Have
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Patent number: 9034680Abstract: In a method for producing a micro-electromechanical device in a material substrate, a component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.Type: GrantFiled: March 21, 2011Date of Patent: May 19, 2015Assignee: ELMOS Semiconductor AGInventor: Arnd Ten-Have
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Patent number: 8994128Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.Type: GrantFiled: January 10, 2011Date of Patent: March 31, 2015Assignee: ELMOS Semiconductor AGInventor: Arnd Ten Have
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Patent number: 8975671Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.Type: GrantFiled: January 10, 2011Date of Patent: March 10, 2015Assignee: ELMOS Semiconductor AGInventor: Arnd Ten Have
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Publication number: 20130126948Abstract: In a method for producing a micro-electromechanical device in a material substrate, component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.Type: ApplicationFiled: March 21, 2011Publication date: May 23, 2013Applicant: ELMOS SEMICONDUCTOR AGInventor: Arnd Ten-Have
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Publication number: 20130087864Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.Type: ApplicationFiled: January 10, 2011Publication date: April 11, 2013Applicant: ELMOS SEMICONDUCTOR AGInventor: Arnd Ten Have
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Publication number: 20130087865Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.Type: ApplicationFiled: January 10, 2011Publication date: April 11, 2013Applicant: ELMOS SEMICONDUCTOR AGInventor: Arnd Ten Have
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Patent number: 5847286Abstract: The invention concerns a magnetically inductive flow meter for flowing media with a tube consisting of ceramic material and used as a measurement line, a magnet to produce a magnetic field running at least essentially perpendicular to the tube axis, at least two measuring electrodes arranged preferably perpendicular to the tube axis and preferably perpendicular to the direction of the magnetic field and at least two screening or shielding electrodes shielding the measuring electrodes from outer electrical fields, wherein the measuring electrodes and the screening or shielding electrodes are placed outside the tube.Type: GrantFiled: April 4, 1997Date of Patent: December 8, 1998Assignee: Krohne Messtechnik GmbH & Co. KGInventors: Jurgen Winfried Klein, Peter Dullenkopf, Arnd ten Have, Andreas Lenniger, Andreas Stratmann