Abstract: A method for transferring an atomically thin layer comprising providing a target substrate and a donor substrate on which a first atomically thin layer has been formed. The method further comprises disposing an adhesion layer at the donor substrate or at the target substrate. The method further comprises bringing the target substrate and the donor substrate together. Further, the method comprises bonding together the donor substrate, the adhesion layer and the target substrate and removing the donor substrate.

Abstract: In an embodiment a device includes a base layer, a support structure formed on the base layer, a side structure formed on the base layer and an elongated structure extending in a length direction in a device layer, wherein the elongated structure has a width in the device layer in a direction perpendicular to a length direction and a height in a direction out of the device layer and perpendicular to the length direction, wherein the elongated structure is delimited by two side surfaces and is supported on the support structure, and wherein at least a part of the side structure is arranged at a distance from the elongated structure in a width direction.

Abstract: In an embodiment a device includes a device layer, a substrate defining a substrate plane extending through a point of the substrate being closest to the device layer, a waveguide configured to guide an electromagnetic wave, wherein the waveguide extends in a length direction in the device layer, and wherein the waveguide has a width in a device layer plane in a direction perpendicular to the length direction and a height out of the device layer plane in the direction perpendicular to the length direction and a support structure, wherein the support structure extends from the substrate to the device layer to support the waveguide on the substrate.