Abstract: A production method includes fixing ball elements of a semiconductor material to a carrier substrate by means of heat and pressure; and one-sided thinning of the ball elements fixed to the carrier substrate to form plano-convex lens elements of a semiconductor material.

Abstract: A production method includes fixing ball elements of a semiconductor material to a carrier substrate by means of heat and pressure; and one-sided thinning of the ball elements fixed to the carrier substrate to form plano-convex lens elements of a semiconductor material.

Abstract: Disclosed is a method for structuring a flat substrate consisting of a glass-type material.

Abstract: What is proposed here is a method of structuring surfaces of glass-type materials and variants of this method, comprising the following steps of operation: providing a semiconductor substrate, structuring, with the formation of recesses, of at least one surface of the semiconductor substrate, providing a substrate of glass-type material, joining the semiconductor substrate to the glass-type substrate, with a structured surface of the semiconductor substrate being joined to a surface of the glass-type surface in an at least partly overlapping relationship, and heating the substrates so bonded by annealing in a way so as to induce an inflow of the glass-type material into the recesses of the structured surface of the semiconductor substrate. The variants of the method are particularly well suitable for the manufacture of micro-optical lenses and micro-mechanical components such as micro-relays or micro-valves.

Abstract: The invented method is distinguished by a combination of the following method steps: provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of the semiconductor planar substrate inside at least one surface region of the semiconductor planar substrate in order to form a raised surface region in relation to the surface planar region of reduced thickness, structuring the raised surface region of the semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside the raised surface regions, joining the structured surface of the semiconductor planar substrate with the glasslike planar substrate in such a manner that the glasslike planar substrate at least partially covers the surface planar region of reduced thickness, tempering the joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, the glasslike planar substrate covering the surface reg

Abstract: The invented method is distinguished by a combination of the following method steps: provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of the semiconductor planar substrate inside at least one surface region of the semiconductor planar substrate in order to form a raised surface region in relation to the surface planar region of reduced thickness, structuring the raised surface region of the semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside the raised surface regions, joining the structured surface of the semiconductor planar substrate with the glasslike planar substrate in such a manner that the glasslike planar substrate at least partially covers the surface planar region of reduced thickness, tempering the joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, the glasslike planar substrate covering the surface region

Abstract: What is proposed here is a method of structuring surfaces of glass-type materials and variants of this method, comprising the following steps of operation: providing a semiconductor substrate, structuring, with the formation of recesses, of at least one surface of the semiconductor substrate, providing a substrate of glass-type material, joining the semiconductor substrate to the glass-type substrate, with a structured surface of the semiconductor substrate being joined to a surface of the glass-type substrate in an at least partly overlapping relationship, and heating the substrates so bonded by annealing in a way so as to induce an inflow of the glass-type material into the recesses of the structured surface of the semiconductor substrate. The variants of the method are particularly well suitable for the manufacture of micro-optical lenses and micro-mechanical components such as micro-relays or micro-valves.

Abstract: Disclosed is a sol solution and a method for producing this sol solution, which serves as a coating agent for producing glass coatings for electrically conductive materials that can be used in anodic bonding. The sol solution is a mix of an organosol consisting of SiO2 dissolved in at least one n-alkanol or a mixture of a multiplicity of n-alkanols, a tetraethyl orthosilicate (TEOS) and/or a triethoxy silane or a trimethoxy silane as well as an acid or a base and water and the mixture being partially polymerized. The sol mixture is distinguished in that the mix contains an alkali alcoholate.

Abstract: Disclosed is a method for structuring a flat substrate consisting of a glass-type material.