Abstract: In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression may be an annular trench having a width to depth ratio ?1. Alternatively, the structure may be waffle-shaped with multiple depressions.

Abstract: In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression may be an annular trench having a width to depth ratio ?1. Alternatively, the structure may be waffle-shaped with multiple depressions.

Abstract: A power semiconductor module includes a plastic housing having a bottom plane in which a substrate is disposed. Disposed inside the module are the substrate, structures on the substrate, a rubber-like soft encapsulation and a hard encapsulation above the soft encapsulation. Internal struts of the housing extend into the soft encapsulation and, if appropriate, have ends with transverse extensions disposed within the soft encapsulation. The effect of this module construction is that a back pressure or reaction opposes forces acting externally on the substrate.

Abstract: A power semiconductor module and method for producing the module includes a plastic housing having a lower surface. An electrically insulating substrate having an upper surface is inserted in the lower surface of the plastic housing for supporting electrical components. A metallization is disposed at least on the upper surface of the substrate. The metallization on the upper surface of the substrate is patterned to form conductor tracks. Components are soldered onto the patterned metallization. Locating compartments disposed in the plastic housing form a soldering jig for the components during production of the module.

Abstract: A power semiconductor module includes a plastic housing having an interior. A substrate in the form of a ceramic plate with upper and lower surfaces is inserted in the housing as a housing bottom. Metallizations are disposed on the upper and lower surfaces of the ceramic plate. The metallization on the upper surface of the ceramic plate faces the interior of the housing and is structured to form conductor paths. Power semiconductor components, connecting elements and terminal elements for external termimals all are disposed on the upper surface of the ceramic plate. A frame is connected to the substrate in the interior of the housing for sealing against moisture.

Abstract: Method for the metallic joining of parts which are formed by semiconductor components with metallization on at least one side or by metallic components or metallic substrates. A composite multilayer material is arranged between the parts to be joined together. Subsequently, the components are joined together at least under the action of defined heat such that only the surface layers directly facing the parts of the composite material are softened.

Abstract: A semiconductor power module includes a plastic housing, a ceramic substrate with upper and lower surfaces being disposed in the housing, upper and lower metallizations respectively disposed on the upper and lower surfaces of the substrate, components disposed on the upper metallization, at least one support having upper and lower parts and being disposed on the substrate in the housing, a first elastomeric soft casting compound disposed in the housing covering the substrate and the lower part of the at least one support, the upper part of the at least one support protruding from the first casting compound, and a second thermo-setting hard casting compound covering the upper part of the at least one support and connecting the upper part to the housing.

Abstract: A semiconductor power module includes a metallized ceramic carrier plate having an opening formed therein, a semiconductor power component with a base area of a given size adjacent the ceramic plate at the opening, a heat pipe integrated in the semiconductor power module having a vapor space, a condensation zone and a heating zone for distributing heat removed from the semiconductor power component at the heating zone over an area of the condensation zone being larger than the given area, a highly heat-conducting ceramic base plate having two metallized sides, and a frame vacuum-tightly interconnecting the carrier plate and the base plate forming the vapor space of the heat pipe therebetween.

Abstract: A semiconductor power module includes a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to the metallized ceramic, and at least one heat conduit integrated into the semiconductor power module. The heat conduit includes a condensation area having a larger surface than the base surface, over which dissipation heat from the semiconductor power component is distributed.

Abstract: A power thyristor assembly, includes an insulating and metallized substrate, and a power thyristor having a cathode and gate side facing toward and soldered to the substrate, and an anode side facing away from the substrate, the anode side having an anode and a passivation ditch surrounding the anode, the anode side including a reverse junction, the cathode and gate side including a blocking pn-junction, and the passivation ditch being common to the anode side reverse junction and to the cathode and gate side blocking pn-junction.

Abstract: Rectifier module, including a frame forming a housing wall and having an open top and bottom, a ceramic plate cemented to the frame forming a housing bottom and having a side facing the interior of the housing and a side facing away from the interior of the housing, metallizations disposed on the side of the ceramic plate facing the interior of the housing forming conductor strips for soldering on semiconductor components, internal connecting straps, external connecting elements in the form of flat plugs having a broadened base part being soldered to one of the metallizations, an actual plug connector part being freely accessible from the top of the housing and an extension curve being disposed between the base part and the actual plug connector, the extension curve having a cross-sectional area being smaller than the cross-sectional area of the base and actual plug connector parts, a sealing compound filling substantially half of the housing, and a copper foil being disposed on the side of the ceramic plate

Abstract: A power transistor module includes a housing having a frame forming a housing wall and a ceramic plate fastened to the frame forming a housing bottom, structured metallizations disposed on the ceramic plate forming conductor runs and terminal pads, components including at least one power transistor and a bypass diode connected to the terminal pads, wiring elements being connected to the components and being freely accessible from the top of the housing, the wiring elements including an auxiliary collector terminal, and an auxiliary diode connected between the auxiliary collector terminal and the collector electrode of the power transistor.

Abstract: In this static converter module, which is equipped with thyristors, diodes or power transistors, mounting lugs (4,11) having mounting holes (5,6,12,13) are used for mounting the module on a heat sink. The housing of the module is essentially formed by a frame (1,10) which is open at the top and at the bottom and by a ceramic plate which is inserted into the base part of the frame. For the purpose of fixing the ceramic plate in place, a peripheral indentation (7,15) is provided in the base part of the frame. In order to prevent mechanical stresses in the area of the mounting holes/mounting lugs from being transmitted to the ceramic plate, slits (9) are provided between the frame walls and the mounting holes. As an alternative to this, the peripheral indentation (15) can be provided with steps in such a manner that in the area of the two frame walls provided with the mounting lugs (11) a slot-shaped recess (16) is produced between the ceramic plate and the peripheral indentation (15).

Abstract: In directly bonding a metal to ceramics, in accordance with the invention, that surface of a metal component which is to be bonded by heating to a ceramic substrate is provided with parallel-running grooves before the preoxidation. The grooves make it possible to optimize the quantity of oxygen available at the bonding location and provide good flow behavior of the melt. As a result, a bond with good adhesion is obtained. Moreover, there is no formation of a thicker oxide layer on the free smooth surface of the metal component.

Abstract: Method for directly bonding copper foils having a copper oxide layer to oxide-ceramic substrates by heating the ceramic substrate covered with the copper foil in an oxygen-containing atmosphere to a temperature above the eutectic temperature of Cu and Cu.sub.2 O, but below the melting temperature of copper in a vacuum furnace at a pressure of not more than 1 mbar while maintaining a furnace atmosphere with a partial oxygen pressure between 0.001 and 0.1 mbar.

Abstract: Connecting strap for electrically connecting a contact of a semiconductor component to a conductor run, including a bracket having two doubly bent ends, soldering lugs integral with the ends of the bracket, and lateral wings integral with one of the doubly bent ends of the bracket for connection to a conductor run.

Abstract: Current converter assembly, including a parallelepipedal housing having an upper surface and an interior being filled with a hardened cast insulating compound, the housing including a flat frame having an open top and bottom, a rectangular edge section extended all around the frame, a rib extended all around the frame toward the interior thereof at substantially the middle of the edge section, and steadying struts disposed on the rib, a ceramic plate having a surface facing the interior of the housing and having outer dimensions corresponding to the length and width of the flat frame, conducting copper foils disposed on the surface of the ceramic plate facing the interior of the housing, semiconductor chips being soldered on the copper foils, connecting straps connecting the semiconductor chips to each other, and connecting elements being extended out of the housing from the ceramic plate in a direction perpendicular to the ceramic plate, the connecting elements being retained by the steadying struts and bein

Abstract: Method for the direct joining of metal pieces which have a surface metal oxide layer, to oxide ceramic substrates by heating the ceramic substrates covered with the metal pieces in an oxygen-containing atmosphere to a temperature above the eutectic temperature of the metal and the metal oxide, but below the melting temperature of the metal. The heating is carried out in a continuous heating furnace in a nitrogen atmosphere with an addition of oxygen of 20 to 50 vpm. The cooling-down in the continuous heating furnace takes place after the solidification of the eutectic melt, in a nitrogen atmosphere which has an oxygen content well below the 20 vpm.

Abstract: A chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), and a method of making the same, wherein a semi-conductor body of a first conductivity type is provided with source and drain diffusion zones spaced apart and extending a predetermined distance into the semiconductor body from the front face thereof. Also formed in the semiconductor body is a pair of connection zones extending from the front face to the rear face of the semiconductor body, and connected to the diffusion zones on the front face by means of conductor paths, the diffusion zones, the conduction paths, and the connection zones formed of a material having a second conductivity and which are of a second conduction type with opposite polarity to the conduction type of the semiconductor body. External connections are made to the diffusion zones through the conductor paths and the connection zones by means of connection lines contacting the connection zones at the rear face of the semiconductor body.