Abstract: A device for mounting a substrate includes a susceptor as a support for the substrate to be coated. The susceptor includes an insert whose surface is at least partly formed by a metal carbide layer of a predetermined thickness. The device for mounting the substrate eliminates a contamination of the substrate during processing, such as during production of an epitaxial layer on a wafer. A method for producing the insert includes the steps of producing a metallic preform, embedding the metallic preform in a carbon-containing powder, heating the metallic preform and the carbon-containing powder to an elevated temperature, hard processing the heat-treated preform and disposing the hard-processed preform on the susceptor as an insert.

Abstract: A process for the thermal annealing of implantation-doped silicon carbide semiconductors in a gas stream brings practically no carbon to the silicon carbide semiconductor. In one embodiment, a container, a carrier, radiation shields and a baseplate are composed of a metal or a metal compound such as, for example, tantalum or tantalum carbide, at least at locations which come into contact with the gas stream.

Abstract: A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensure that the production of the ohmic contact does not lead to impairment of other structures on the component and that the ohmic contact, for its part, is insensitive with respect to later method steps at high temperatures, the first metal is applied to the substrate for the ohmic contact before the epitaxial layer is grown.

Abstract: The device for producing and processing silicon carbide semiconductor substrates at a high temperature has a susceptor, on which the semiconductor substrates rest, so that there is good thermal contact between the semiconductor substrates and the susceptor. To ensure that there is no contamination of the component during the production process, the surface of the susceptor is covered with cover plates each formed with a cutout for a semiconductor substrate. The surface of the susceptor is substantially completely covered by the cover plates and the semiconductor substrates.

Abstract: A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensure that the production of the ohmic contact does not lead to impairment of other structures on the component and that the ohmic contact, for its part, is insensitive with respect to later method steps at high temperatures, the first metal is applied to the substrate for the ohmic contact before the epitaxial layer is grown.