Abstract: A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Abstract: A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Abstract: A focus sensor comprises a confocal sensor. Within the confocal sensor there are a plurality of aperture plates positioned in front of a plurality of detectors. Rather than a conventional pinhole aperture shape there is a central aperture surrounded by a plurality of outer aperture portions.

Abstract: An inspection apparatus configured to measure a property of a substrate includes an illumination source, a beam splitter, a first polarizer positioned between the illumination source and the beam splitter, an objective lens and an optical device that alters a polarization state of radiation traveling through it positioned between the beam splitter and the substrate and a second polarizer positioned between the beam splitter and a detector. An axis of the second polarizer is rotated with respect to an axis of the first polarizer. Radiation polarized by the first polarizer that reflects off any optical elements between the beam splitter and the optical device is prevented from entering the detector by the second polarizer. Only radiation that passes twice through the optical device has its polarization direction rotated so that it passes through the second polarizer and enters the detector.

Abstract: A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300 nm or less can be obtained.

Abstract: The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

Abstract: A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300nm or less can be obtained.

Abstract: The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

Abstract: A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300 nm or less can be obtained.

Abstract: A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300 nm or less can be obtained.

Abstract: Picture display device comprising an electron gun with cathodes having an enhanced dissipation of heat by virtue of an enlarged surface or an increase of the emissivity of the surface.