Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: The present invention is directed to an apparatus and process for heating and cooling semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a cooling device for actively cooling the wafers after the wafers have been heated. During use, the cooling device can be movable towards and away from a wafer placed in the chamber for selectively cooling the wafer at desired times. In an alternative embodiment, a gas can be directed towards the wafer for rapidly reducing the temperature of the wafer at the completion of the process. Alternatively, the wafer can be lowered to close proximity of a cooling member to achieve active and selective cooling.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A novel apparatus for heat treating semiconductor wafers includes a heating device which comprises an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. The tuning devices adjust the overall irradiance distribution of the light energy sources. The tuning devices can either be active sources of light energy or passive sources which reflect, refract, or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: The present invention is directed to an apparatus and process for heating and cooling semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a cooling device for actively cooling the wafers after the wafers have been heated. During use, the cooling device can be movable towards and away from a wafer placed in the chamber for selectively cooling the wafer at desired times. In an alternative embodiment, a gas can be directed towards the wafer for rapidly reducing the temperature of the wafer at the completion of the process. Alternatively, the wafer can be lowered to close proximity of a cooling member to achieve active and selective cooling.

Abstract: The present invention is directed to an apparatus and process for heating and cooling semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a cooling device for actively cooling the wafers after the wafers have been heated. During use, the cooling device can be movable towards and away from a wafer placed in the chamber for selectively cooling the wafer at desired times. In an alternative embodiment, a gas can be directed towards the wafer for rapidly reducing the temperature of the wafer at the completion of the process. Alternatively, the wafer can be lowered to close proximity of a cooling member to achieve active and selective cooling.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: The present invention is directed to an apparatus and process for heating and cooling semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a cooling device for actively cooling the wafers after the wafers have been heated. During use, the cooling device can be movable towards and away from a wafer placed in the chamber for selectively cooling the wafer at desired times. In an alternative embodiment, a gas can be directed towards the wafer for rapidly reducing the temperature of the wafer at the completion of the process. Alternatively, the wafer can be lowered to close proximity of a cooling member to achieve active and selective cooling.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. The apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A system for heating a plurality of semiconductor wafers at the same time includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.