Patents by Inventor Arnost Neugroschel

Arnost Neugroschel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for testing and diagnosing MOS transistors
    Patent number: 6275059
    Abstract: A direct-current current-voltage (DCIV) method enables rapid evaluation of the degradation of deep-submicron nMOSTs and pMOSTs under channel hot carrier stress resulting from a p/n junction forward biased at a safe operating voltage level.
    Type: Grant
    Filed: October 4, 1999
    Date of Patent: August 14, 2001
    Assignee: University of Florida
    Inventors: Chih-Tang Sah, Arnost Neugroschel
  • Oxide charge induced high low junction emitter solar cell
    Patent number: 4483063
    Abstract: A method of forming a high-low junction emitter silicon solar cell including the producing of an electron accumulation layer by oxide-charge-induction.
    Type: Grant
    Filed: June 1, 1982
    Date of Patent: November 20, 1984
    Assignee: University of Florida
    Inventors: Arnost Neugroschel, Shing-Chong Pao, Fred A. Lindholm, Jerry G. Fossum, Chih-Tang Sah
  • Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
    Patent number: 4431858
    Abstract: A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell.This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.
    Type: Grant
    Filed: May 12, 1982
    Date of Patent: February 14, 1984
    Assignee: University of Florida
    Inventors: Franklin N. Gonzalez, Arnost Neugroschel
  • Oxide charge induced high low junction emitter solar cell
    Patent number: 4343962
    Abstract: A high-low junction emitter silicon solar cell including an electron accumulation layer formed by oxide-charge-induction.
    Type: Grant
    Filed: February 2, 1981
    Date of Patent: August 10, 1982
    Inventors: Arnost Neugroschel, Shing-Chong Pao, Fred A. Lindholm, Jerry G. Fossum, Chin-Tang Sah