Patents by Inventor Arshad Saleem BHATTI

Arshad Saleem BHATTI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10761095
    Abstract: A microfluidic device including a serum separator, a quantum dot and antibody inlet connected to the serum separator, a quantum dot linked immunosorbent assay (QLISA) chamber connected to the serum separator, and an outlet connected to the QLISA chamber. The microfluidic device is configured to determine an amount of drug in a serum.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: September 1, 2020
    Assignee: COMSATS Institute of Information Technology
    Inventors: Madeeha Chaudhry, Malik Abdul Rehman, Raheel Qamar, Arshad Saleem Bhatti
  • Patent number: 10403495
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 3, 2019
    Assignee: COMSATS UNIVERSITY ISLAMABAD
    Inventors: Arshad Saleem Bhatti, Uzma Nosheen, Liaquat Aziz, Nashmia Sabih
  • Patent number: 10332742
    Abstract: A method of synthesizing catalyst doped ZnS nanostructures including preparing a silicon substrate by vacuum depositing a metal catalyst nanostructure on an ultrathin silicon oxide layer, doping a zinc sulfide (ZnS) nanostructure with a catalyst of the metal catalyst nanostructure including at least one of gold (Au), manganese (Mn), and tin (Sn), and modulating ZnS intrinsic defects by the concentration of the catalyst and the size of the ZnS and metal catalyst nanostructures, in which the catalyst is dissolved in a nanowire of the ZnS nanostructure during growth, the concentration of the catalyst in the nanowire is dependent on the size of the catalyst, and the doping is tuned by growth conditions.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: June 25, 2019
    Assignee: COMSATS Institute of Information Technology
    Inventors: Arshad Saleem Bhatti, Muhammad Hafeez, Shania Rehman
  • Publication number: 20190043717
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 7, 2019
    Inventors: Arshad Saleem BHATTI, Uzma NOSHEEN, Liaquat AZIZ, Nashmia SABIH
  • Patent number: 10096469
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: October 9, 2018
    Assignee: COMSATS Institute of Information Technology (CIIT)
    Inventors: Arshad Saleem Bhatti, Uzma Nosheen, Liaquat Aziz, Nashmia Sabih
  • Publication number: 20180061637
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Application
    Filed: August 23, 2017
    Publication date: March 1, 2018
    Inventors: Arshad Saleem BHATTI, Uzma NOSHEEN, Liaquat AZIZ, Nashmia SABIH
  • Publication number: 20170356924
    Abstract: A microfluidic device including a serum separator, a quantum dot and antibody inlet connected to the serum separator, a quantum dot linked immunosorbent assay (QLISA) chamber connected to the serum separator, and an outlet connected to the QLISA chamber. The microfluidic device is configured to determine an amount of drug in a serum.
    Type: Application
    Filed: June 9, 2017
    Publication date: December 14, 2017
    Inventors: Madeeha Chaudhry, Malik Abdul Rehman, Raheel Qamar, Arshad Saleem Bhatti
  • Publication number: 20170200607
    Abstract: A method of synthesizing catalyst self-doped ZnS nanostructures including preparing a silicon substrate by vacuum depositing a metal catalyst nanostructure on an ultrathin silicon oxide layer, doping a zinc sulfide (ZnS) nanostructure with a catalyst of the metal catalyst nanostructure including at least one of gold (Au), manganese (Mn), and tin (Sn), and modulating ZnS intrinsic defects by the concentration of the catalyst and the size of the ZnS and metal catalyst nanostructures, in which the catalyst is dissolved in a nanowire of the ZnS nanostructure during growth, the concentration of the catalyst in the nanowire is dependent on the size of the catalyst, and the doping is tuned by growth conditions.
    Type: Application
    Filed: January 9, 2017
    Publication date: July 13, 2017
    Inventors: Arshad Saleem BHATTI, Muhammad HAFEEZ, Shania REHMAN