Abstract: According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current.

Abstract: A device (100, 200) features a direct conversion compound semiconductor layer (101) configured to convert x-ray or gamma ray photons into an electric current; an integrated circuit (IC) layer (102) situated next to the direct conversion compound semiconductor layer with respect to a z-axis and configured to receive the electric current and process the electric current; and a substrate layer (103) situated next to the IC layer with respect to the z-axis and configured to conduct heat emitted from the IC layer. The substrate layer comprises recesses (104) at corners of a cross section of the substrate layer; and the substrate layer further comprises sliding electrical contacts (117) between the corners, the sliding electrical contacts being connected to the IC layer through the substrate layer to receive the electric current processed.

Abstract: According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current.