Patents by Inventor Art GEISS
Art GEISS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230344399Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Inventors: Ramakrishna VETURY, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 11728781Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: September 30, 2021Date of Patent: August 15, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 11563412Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: February 9, 2021Date of Patent: January 24, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 11558023Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: November 23, 2020Date of Patent: January 17, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Dae Ho Kim, Mary Winters, Jeffrey B. Shealy
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Publication number: 20220021364Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: September 30, 2021Publication date: January 20, 2022Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY
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Patent number: 11165404Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: September 19, 2018Date of Patent: November 2, 2021Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Publication number: 20210184641Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: February 9, 2021Publication date: June 17, 2021Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 10992279Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: September 19, 2018Date of Patent: April 27, 2021Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 10979011Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: September 18, 2018Date of Patent: April 13, 2021Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Publication number: 20210104993Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: November 23, 2020Publication date: April 8, 2021Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Dae Ho KIM, Mary WINTERS, Jeffrey B. SHEALY
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Patent number: 10931251Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: February 14, 2019Date of Patent: February 23, 2021Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Publication number: 20190190479Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: February 14, 2019Publication date: June 20, 2019Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Publication number: 20190036504Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: September 18, 2018Publication date: January 31, 2019Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY
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Publication number: 20190020325Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY
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Publication number: 20190020324Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY
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Patent number: 10110190Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: November 2, 2016Date of Patent: October 23, 2018Assignee: AKOUSTIS, INC.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 10110189Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: November 2, 2016Date of Patent: October 23, 2018Assignee: AKOUSTIS, INC.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Patent number: 10110188Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: November 2, 2016Date of Patent: October 23, 2018Assignee: AKOUSTIS, INC.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
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Publication number: 20180123542Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: November 2, 2016Publication date: May 3, 2018Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY
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Publication number: 20180123541Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: November 2, 2016Publication date: May 3, 2018Inventors: Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Shawn R. GIBB, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Jeffrey B. SHEALY