Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.

Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.

Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Abstract: A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Abstract: A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.