Patents by Inventor Artashes Amamchyan
Artashes Amamchyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9403145Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.Type: GrantFiled: March 9, 2015Date of Patent: August 2, 2016Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Publication number: 20150174552Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.Type: ApplicationFiled: March 9, 2015Publication date: June 25, 2015Inventors: Ravindra S. DIXIT, Hua BAI, Curtis D. MODTLAND, Robert A. WARE, John G. PENDERGAST, JR., Christopher P. CHRISTENSON, Deodatta Vinayak SHENAI-KHATKHATE, Artashes AMAMCHYAN, Kenneth M. CROUCH, Robert F. POLCARI
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Patent number: 9006475Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.Type: GrantFiled: August 15, 2012Date of Patent: April 14, 2015Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Publication number: 20130211118Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.Type: ApplicationFiled: August 15, 2012Publication date: August 15, 2013Applicants: Rohm and Haas Electronic Materials LLC, Dow Global Technologies Inc.Inventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, JR., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Patent number: 7166734Abstract: Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.Type: GrantFiled: September 2, 2005Date of Patent: January 23, 2007Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan
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Publication number: 20060047132Abstract: Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.Type: ApplicationFiled: September 2, 2005Publication date: March 2, 2006Applicant: Rohm and Haas Electronic Materials LLCInventors: Deodatta Shenai-Khatkhate, Artashes Amamchyan
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Patent number: 6956127Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: GrantFiled: January 17, 2003Date of Patent: October 18, 2005Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo, Jr.
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Patent number: 6939983Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.Type: GrantFiled: May 7, 2004Date of Patent: September 6, 2005Assignee: Rohm and Haas Electronic Materials, LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Michael Brendan Power, Ronald L. DiCarol, Jr., James Edward Felton
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Publication number: 20050033073Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.Type: ApplicationFiled: May 7, 2004Publication date: February 10, 2005Applicant: Rohm and Haas Electronic Materials, L.L.C.Inventors: Deodatta Shenai-Khatkhate, Artashes Amamchyan, Michael Power, Ronald Dicarlo, James Felton
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Patent number: 6660874Abstract: Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.Type: GrantFiled: April 6, 2002Date of Patent: December 9, 2003Assignee: Shipley Company, L.L.C.Inventors: Deodatta V. Shenai-Khatkhate, Michael B. Power, Artashes Amamchyan
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Publication number: 20030199704Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3-n where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.Type: ApplicationFiled: November 23, 2002Publication date: October 23, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan
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Publication number: 20030181746Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo
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Publication number: 20020188145Abstract: Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.Type: ApplicationFiled: April 6, 2002Publication date: December 12, 2002Applicant: Shipley Company, L.L.C.Inventors: Deodatta V. Shenai-Khatkhate, Michael B. Power, Artashes Amamchyan