Patents by Inventor Arthur J. McGinnis

Arthur J. McGinnis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gap processing
    Patent number: 8293617
    Abstract: Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: October 23, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Arthur J. McGinnis, Sachin Joshi, Chan Lim
  • GAP PROCESSING
    Publication number: 20120040534
    Abstract: Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 16, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Arthur J. McGinnis, Sachin Joshi, Chan Lim
  • Gap processing
    Patent number: 8058138
    Abstract: Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: November 15, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Arthur J. McGinnis, Sachin Joshi, Chan Lim
  • GAP PROCESSING
    Publication number: 20100015813
    Abstract: Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations.
    Type: Application
    Filed: July 17, 2008
    Publication date: January 21, 2010
    Applicant: Micron Technology, Inc.
    Inventors: Arthur J. McGinnis, Sachin Joshi, Chan Lim