Abstract: A method for stitching a first field mask to a second field mask on a wafer includes providing a photomask with a first set of targets and a second set of targets, printing images of the first set of targets and the second set of targets onto the wafer where the photomask is applied to the wafer having no previous alignment marks formed thereon for the photomask to align to. A first set of alignment marks is formed from the first set of targets and a second set of alignment marks is formed from the second set of targets. The method includes aligning a first field mask to the first set of alignment marks and aligning a second field mask to the second set of alignment marks. The images of the first field mask and the second field mask are thereby stitched together on the wafer.

Abstract: A method for stitching a first field mask to a second field mask on a wafer includes providing a photomask with a first set of targets and a second set of targets, printing images of the first set of targets and the second set of targets onto the wafer where the photomask is applied to the wafer having no previous alignment marks formed thereon for the photomask to align to. A first set of alignment marks is formed from the first set of targets and a second set of alignment marks is formed from the second set of targets. The method includes aligning a first field mask to the first set of alignment marks and aligning a second field mask to the second set of alignment marks. The images of the first field mask and the second field mask are thereby stitched together on the wafer.

Abstract: A single field photomask includes a first set of targets formed on a first side of the photomask, and a second set of targets formed on a second side of the photomask, opposite the first side. In operation, the photomask is to be applied to a wafer without any alignment marks. The photomask forms a first set of alignment marks in the wafer from the first set of targets, and the photomask further forms a second set of alignment marks in the wafer from the second set of targets. The first set of alignment marks is used to align to a first field mask and the second set of alignment marks is used to align to a second field mask to stitch an image of the first field mask to an image of the second field mask.

Abstract: A single field photomask includes a first set of targets formed on a first side of the photomask, and a second set of targets formed on a second side of the photomask, opposite the first side. In operation, the photomask is to be applied to a wafer without any alignment marks. The photomask forms a first set of alignment marks in the wafer from the first set of targets, and the photomask further forms a second set of alignment marks in the wafer from the second set of targets. The first set of alignment marks is used to align to a first field mask and the second set of alignment marks is used to align to a second field mask to stitch an image of the first field mask to an image of the second field mask.

Abstract: A system and method in accordance with the present invention allows for an improved oxide integrity of a polysilicon capacitor compared to capacitors manufactured using conventional semiconductor processing techniques. This is accomplished by moving the capacitor implant step to a time after the deposition of the polysilicon. As an additional benefit, a separate capacitor oxide growth does not need to be performed.

Abstract: System and methods for password protecting an attribute of content transmitted over a network. Content such as a text file, an audio file, a video file, and the like, sent over a network is protected by a password. A sender setting up the protection may determine which attribute of the content is to be protected by the password. Attributes that may be protected include time to access, number of accesses, permission to forward, permission to store, and the like. In a time to view example, the received content may self-destruct unless the receiver enters the password within a specified time period. Protection may be set up such that every time the receiver attempts to access the content, the password has to be re-entered. Access by an unauthorized user who may have possession of the computing device with the received content is prevented by content level protection.

Abstract: A test structure pattern includes a first comb, a second comb, and a serpentine line. The first comb includes a first set of tines of the same orientation. The second comb includes a second set of tines of the same orientation that are interdigitated with the first set of tines. The serpentine line runs between the interdigitated tines of the first metal comb and the second metal comb. The test structure pattern forms a first metal comb, a second metal comb, and a serpentine metal line on a die. Print quality and resolution is tested by checking for electrical continuity in the serpentine metal line and bridging between the serpentine metal line and one of the first metal comb and the second metal comb.

Abstract: A test structure pattern includes a first comb, a second comb, and a serpentine line. The first comb includes a first set of tines of the same orientation. The second comb includes a second set of tines of the same orientation that are interdigitated with the first set of tines. The serpentine line runs between the interdigitated tines of the first metal comb and the second metal comb. The test structure pattern forms a first metal comb, a second metal comb, and a serpentine metal line on a die. Print quality and resolution is tested by checking for electrical continuity in the serpentine metal line and bridging between the serpentine metal line and one of the first metal comb and the second metal comb.

Abstract: A test structure pattern includes a first comb, a second comb, and a serpentine line. The first comb includes a first set of tines of the same orientation. The second comb includes a second set of tines of the same orientation that are interdigitated with the first set of tines. The serpentine line runs between the interdigitated tines of the first metal comb and the second metal comb. The test structure pattern forms a first metal comb, a second metal comb, and a serpentine metal line on a die. Print quality and resolution is tested by checking for electrical continuity in the serpentine metal line and bridging between the serpentine metal line and one of the first metal comb and the second metal comb.

Abstract: A test structure pattern includes a first comb, a second comb, and a serpentine line. The first comb includes a first set of tines of the same orientation. The second comb includes a second set of tines of the same orientation that are interdigitated with the first set of tines. The serpentine line runs between the interdigitated tines of the first metal comb and the second metal comb. The test structure pattern forms a first metal comb, a second metal comb, and a serpentine metal line on a die. Print quality and resolution is tested by checking for electrical continuity in the serpentine metal line and bridging between the serpentine metal line and one of the first metal comb and the second metal comb.