Abstract: An imprinting apparatus includes a silicon master and an anti-stick layer coating the silicon master. The silicon master includes a plurality of features positioned at an average pitch of less than about 425 nm, each of the plurality of features comprises a depression having an opening with its largest opening dimension being less than about 300 nm. The anti-stick layer includes a crosslinked silane polymer network.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An imprinting apparatus includes a silicon master and an anti-stick layer coating the silicon master. The silicon master includes a plurality of features positioned at an average pitch of less than about 425 nm, each of the plurality of features comprises a depression having an opening with its largest opening dimension being less than about 300 nm. The anti-stick layer includes a crosslinked silane polymer network.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a particle-confining region proximate the tensilely strained layer. The method also includes introducing particles into the donor wafer to a depth below the surface, and accumulating at least some particles within the tensilely strained gettering layer. Next, the method includes initiating a cleaving action so as to separate at least one of the material layers form the substrate. The tensilely strained gettering layer may accumulate particles and/or point defects and reduce the implantation dose and thermal budget required for cleaving.