Abstract: Embodiments of present invention provide a method of forming a phase change memory device. The method includes forming a bottom electrode on a supporting structure; forming a first blanket dielectric layer, a phase-change material layer, a second blanket dielectric layer, and a hard mask sequentially on top of the bottom electrode; forming an inner spacer in an opening in the hard mask to modify the opening; extending the opening into the second blanket dielectric layer to create an extended opening; filling the extended opening with a heating element; etching the second blanket dielectric layer, the phase-change material layer, and the first blanket dielectric layer respectively into a second dielectric layer, a phase-change element, and a first dielectric layer; forming a conductive liner surrounding the phase-change element; and forming a top electrode on top of the heating element. A structure formed thereby is also provided.

Abstract: A mushroom memory cell may be formed by depositing a second dielectric layer on top of a first dielectric layer and a heater, depositing a hard mask on top of the second dielectric layer, performing a directional reactive-ion etching to remove an exposed portion of the second dielectric layer, performing a lateral etching to remove a portion of the second dielectric layer under the hard mask, performing directional deposition of a phase change material (PCM) over the heater, depositing a covering dielectric over the PCM, performing a second directional etching to expose a top surface of the PCM, and depositing a top electrode on the surface of the PCM.