Patents by Inventor Arthur Sato
Arthur Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10679825Abstract: Systems and methods for applying frequency and match tuning in a non-overlapping manner are described. For example, a radio frequency (RF) generator is tuned for a time interval and an impedance match is not tuned for the time interval. The impedance match is tuned before or after the RF generator is tuned. Such a non-overlap in the tuning of the RF generator and the impedance match facilitates a reduction in reflected power during a pulse without the tuning of the RF generator interfering with the tuning of the impedance match.Type: GrantFiled: November 15, 2017Date of Patent: June 9, 2020Assignee: Lam Research CorporationInventors: Ying Wu, Alex Paterson, John Drewery, Arthur Sato
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Patent number: 10438775Abstract: A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode.Type: GrantFiled: August 29, 2014Date of Patent: October 8, 2019Assignee: Lam Research CorporationInventor: Arthur Sato
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Patent number: 10319570Abstract: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.Type: GrantFiled: March 6, 2017Date of Patent: June 11, 2019Assignee: Lam Research CorporationInventors: John C. Valcore, Jr., Bradford J. Lyndaker, Arthur Sato
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Publication number: 20190148114Abstract: Systems and methods for applying frequency and match tuning in a non-overlapping manner are described. For example, a radio frequency (RF) generator is tuned for a time interval and an impedance match is not tuned for the time interval. The impedance match is tuned before or after the RF generator is tuned. Such a non-overlap in the tuning of the RF generator and the impedance match facilitates a reduction in reflected power during a pulse without the tuning of the RF generator interfering with the tuning of the impedance match.Type: ApplicationFiled: November 15, 2017Publication date: May 16, 2019Inventors: Ying Wu, Alex Paterson, John Drewery, Arthur Sato
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Patent number: 10134570Abstract: Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.Type: GrantFiled: May 18, 2015Date of Patent: November 20, 2018Assignee: Lam Research CorporationInventor: Arthur Sato
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Patent number: 9997381Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.Type: GrantFiled: February 7, 2014Date of Patent: June 12, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Brian McMillin, Arthur Sato, Neil Benjamin
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Publication number: 20170178873Abstract: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.Type: ApplicationFiled: March 6, 2017Publication date: June 22, 2017Inventors: John C. Valcore, JR., Bradford J. Lyndaker, Arthur Sato
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Patent number: 9620337Abstract: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.Type: GrantFiled: February 19, 2014Date of Patent: April 11, 2017Assignee: Lam Research CorporationInventors: John C. Valcore, Jr., Bradford J. Lyndaker, Arthur Sato
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Patent number: 9484214Abstract: A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.Type: GrantFiled: June 2, 2014Date of Patent: November 1, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Tom Kamp, Arthur Sato, Alex Paterson
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Patent number: 9412670Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.Type: GrantFiled: May 23, 2013Date of Patent: August 9, 2016Assignee: Lam Research CorporationInventors: Robert G. O'Neill, Arthur Sato, Eric Tonnis, Seetharaman Ramachandran, Shang-I Chou
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Publication number: 20150248995Abstract: Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.Type: ApplicationFiled: May 18, 2015Publication date: September 3, 2015Inventor: Arthur Sato
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Publication number: 20150235808Abstract: A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.Type: ApplicationFiled: June 2, 2014Publication date: August 20, 2015Applicant: Lam Research CorporationInventors: Tom Kamp, Arthur Sato, Alex Paterson
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Patent number: 9083182Abstract: A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of decoupling arcing RF signals in a plasma chamber is also disclosed.Type: GrantFiled: November 21, 2012Date of Patent: July 14, 2015Assignee: Lam Research CorporationInventor: Arthur Sato
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Patent number: 9059101Abstract: Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.Type: GrantFiled: March 11, 2013Date of Patent: June 16, 2015Assignee: Lam Research CorporationInventor: Arthur Sato
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Publication number: 20140367044Abstract: A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode.Type: ApplicationFiled: August 29, 2014Publication date: December 18, 2014Inventor: Arthur Sato
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Publication number: 20140349417Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.Type: ApplicationFiled: May 23, 2013Publication date: November 27, 2014Applicant: Lam Research CorporationInventors: Robert G. O'Neill, Arthur Sato, Eric Tonnis, Seetharaman Ramachandran, Shang-I Chou
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Publication number: 20140256066Abstract: Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.Type: ApplicationFiled: March 11, 2013Publication date: September 11, 2014Applicant: Lam Research CorporationInventor: Arthur Sato
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Publication number: 20140235063Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.Type: ApplicationFiled: February 7, 2014Publication date: August 21, 2014Applicant: Lam Research CorporationInventors: Brian McMillin, Arthur Sato, Neil Benjamin
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Publication number: 20140210508Abstract: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.Type: ApplicationFiled: February 19, 2014Publication date: July 31, 2014Applicant: Lam Research CorporationInventors: John C. Valcore, JR., Bradford J. Lyndaker, Arthur Sato
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Patent number: 8736175Abstract: A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.Type: GrantFiled: October 20, 2010Date of Patent: May 27, 2014Assignee: Lam Research CorporationInventors: Maolin Long, Seyed Jafar Jafarian-Tehrani, Arthur Sato, Neil Martin Paul Benjamin, Norman Williams