Abstract: Rare earth metal containing compounds of the formula Sr2YbSbO6 have been prepared with high critical temperature thin film superconductor structures, and can be fabricated into a superconductor insulator superconductor step edge Josephson junction, as well as being used in other ferroelectrics, pyroelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the formula Sr2LuSbO6 and Sr2LaSbO6 have been prepared as high critical temperature thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the general formula Sr2RESbO6, wherein RE is a rare earth metal, have been prepared as dielectric substrates and buffer layers in thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the formula Sr2LuSbO6 have been prepared with high critical temperature thin film superconductor structures, and can be fabricated into an antenna, as well as being used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric lead-based perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.

Abstract: Rare earth metal containing compounds of the general formula Sr2RESbO6, wherein RE is a rare earth metal, have been prepared with high critical temperature thin film superconductor strucutures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric materials comprising a charge compensated lead-based perovskite having the general formula ABO3 is provided, which has reasonably low and fairly temperature insensitive dielectric constants over operating temperatures of −80° C. to 100° C., reasonable loss tangents (<˜10−1), and high tunability. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure.

Abstract: Compounds of the general formula A4MeSb3O12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the of the general formula La3−zMezBa3Ca1−vNcvCu7O16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors TABLE 1 Properties of La3-zMezBa3Ca1-vCu7O16+x Compounds. Lattice Parameter (Å) Onset Compound c &agr; Tc (K.) La3Ba3CaCu7O16+x 11.650 3.865 72  11.

Abstract: The microwave properties of numerous perovskite antimonates like A2MeSbO6 where A=Ba or Sr, Me=a rare earth, Y, Sc, Ga, or In and A4MeSb3O12 where A=Ba or Sr and M=Li, Na or K were measured at 10 Ghz and 300 K. Using the microwave properties and lattice parameters of these materials, the Clausius-Mossotti relationship and a nonlinear regression fitting program, the polarizability of Sb5+ was investigated and determined to be 1.18±0.49 A3. This low polarizability and the low loss of antimonates in general indicate that Sb5+ is an excellent candidate for use as a constituent in the fabrication of low dielectric constant, low loss, lattice matching perovskite oxide microwave substrates.

Abstract: Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: In the preferred embodiment, a variable magnetic reluctor structure comprng an iron yoke having two opposing "U"-shaped bodies, magnetic flux sources formed by portions of the yoke, a magnetic flux path, a working space and a reluctor space is provided. A reluctor member comprising diamagnetic disks is inserted within the reluctor space decreasing the magnetic permeability of the magnetic flux path to a value lesser than that of air (1.0). The iron disks increase permeability, while either a Type I or a Type II superconducting disk or a combination of iron disks interspersed between Type II superconducting disks decreases permeability.

Abstract: Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors.

Abstract: Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors.

Abstract: In the preferred embodiment, a variable magnetic reluctor structure comprising an iron yoke having two opposing "U"-shaped bodies, magnetic flux sources formed by portions of the yoke, a magnetic flux path, a working space and a reluctor space is provided. A reluctor member comprising diamagnetic disks is inserted within the reluctor space decreasing the magnetic permeability of the magnetic flux path to a value lesser than that of air (1.0). The iron disks increase permeability, while either a Type I or a Type II superconducting disk or a combination of iron disks interspersed between Type II superconducting disks decreases permeability.

Abstract: Compounds of the general formula A.sub.2 MeSbO.sub.6 wherein A is either barium (Ba) or strontium (Sr) and Me is a non-magnetic ion selected from the group consisting of scandium (Sc), indium (In) and gallium (Ga) have been prepared and included in high critical temperature thin film superconductor structures.

Abstract: c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sup.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.

Abstract: A piezoelectrically controlled superconducting switch is provided for use in superconducting devices and piezoelectric devices. This switch includes a substrate, a superconductor which is bonded to the substrate, and a piezoelectric subassembly which has a load applicator and voltage source for straining the superconductor and for changing its superconductor curve of resistivity versus temperature.