Patents by Inventor Aseem Kumar Srivastava
Aseem Kumar Srivastava has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11699570Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.Type: GrantFiled: February 7, 2022Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Supakit Charnvanichborikarn, Wei Zou, Hans-Joachim L. Gossmann, Qintao Zhang, Aseem Kumar Srivastava, William Robert Bogiages, Jr., Wei Zhao
-
Patent number: 9036470Abstract: A system and method for virtual private application networks includes receiving a first packet associated with a first network flow at a network device, determining one or more first characteristics of the first network flow based on information associated with the first packet, determining one or more second characteristics of a first virtual private application network (VPAN) based on information associated with the one or more first characteristics, assigning the first network flow to the first VPAN, selecting one or more first network switching devices to be associated with the first VPAN, and transmitting one or more first flow control messages to the selected one or more first network switching devices. The one or more first flow control messages provide forwarding instructions for network traffic associated with the first network flow to the selected one or more first network switching devices.Type: GrantFiled: March 11, 2013Date of Patent: May 19, 2015Assignee: Dell Products L.P.Inventors: Mohnish Anumala, Jeyasubramanian Irungolapillai, Aseem Kumar Srivastava
-
Publication number: 20140254406Abstract: A system and method for virtual private application networks includes receiving a first packet associated with a first network flow at a network device, determining one or more first characteristics of the first network flow based on information associated with the first packet, determining one or more second characteristics of a first virtual private application network (VPAN) based on information associated with the one or more first characteristics, assigning the first network flow to the first VPAN, selecting one or more first network switching devices to be associated with the first VPAN, and transmitting one or more first flow control messages to the selected one or more first network switching devices. The one or more first flow control messages provide forwarding instructions for network traffic associated with the first network flow to the selected one or more first network switching devices.Type: ApplicationFiled: March 11, 2013Publication date: September 11, 2014Applicant: DELL PRODUCTS L.P.Inventors: Mohnish Anumala, Jeyasubramanian Irungolapillai, Aseem Kumar Srivastava
-
Patent number: 8580076Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).Type: GrantFiled: May 22, 2003Date of Patent: November 12, 2013Assignee: LAM Research CorporationInventors: Alan Frederick Becknell, Thomas James Buckley, David Ferris, Richard E. Pingree, Jr., Palanikumaran Sakthivel, Aseem Kumar Srivastava, Carlo Waldfried
-
Publication number: 20130248113Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.Type: ApplicationFiled: May 13, 2013Publication date: September 26, 2013Applicant: Lam Research CorporationInventors: Phillip Geissbûhler, Ivan Berry, Armin Huseinovic, Shijian Luo, Aseem Kumar Srivastava, Carlo Waldfried
-
Patent number: 8268181Abstract: A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly.Type: GrantFiled: September 2, 2009Date of Patent: September 18, 2012Assignee: Axcelis Technologies, Inc.Inventors: Aseem Kumar Srivastava, Palanikumaran Sakthivel, Thomas James Buckley
-
Publication number: 20110136346Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.Type: ApplicationFiled: December 4, 2009Publication date: June 9, 2011Applicant: AXCELIS TECHNOLOGIES, INC.Inventors: Phillip Geissbühler, Ivan Berry, Armin Huseinovic, Shijian Luo, Aseem Kumar Srivastava, Carlo Waldfried
-
Publication number: 20100055807Abstract: A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly.Type: ApplicationFiled: September 2, 2009Publication date: March 4, 2010Applicant: AXCELIS TECHNOLOGIES, INC.Inventors: Aseem Kumar Srivastava, Palanikumaran Sakthivel, Thomas James Buckley
-
Patent number: 7037846Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.Type: GrantFiled: January 6, 2004Date of Patent: May 2, 2006Assignee: Axcelis Technologies, Inc.Inventors: Aseem Kumar Srivastava, Herbert Harold Sawin, Palanikumaran Sakthievel
-
Publication number: 20040238123Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).Type: ApplicationFiled: May 22, 2003Publication date: December 2, 2004Applicant: AXCELIS TECHNOLOGIES, INC.Inventors: Alan Frederick Becknell, Thomas James Buckley, David Ferris, Richard E. Pingree, Palanikumaran Sakthivel, Aseem Kumar Srivastava, Carlo Waldfried
-
Publication number: 20040235299Abstract: A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly.Type: ApplicationFiled: May 22, 2003Publication date: November 25, 2004Applicant: AXCELIS TECHNOLOGIES, INC.Inventors: Aseem Kumar Srivastava, Palanikumaran Sakthivel, Thomas James Buckley
-
Patent number: 6796711Abstract: A contact measurement probe for measuring a temperature of a substrate in a process environment includes a probe head having a contact surface made of a ceramic material or a polymeric material for contacting the substrate. The contact measurement probe eliminates electrical biasing effects in process environments that include an ion source, thereby providing greater accuracy and reproducibility in temperature measurement.Type: GrantFiled: March 29, 2002Date of Patent: September 28, 2004Assignee: Axcelis Technologies, Inc.Inventors: Michael Bruce Colson, Aseem Kumar Srivastava
-
Publication number: 20040140053Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.Type: ApplicationFiled: January 6, 2004Publication date: July 22, 2004Inventors: Aseem Kumar Srivastava, Herbert Harold Sawin, Palanikumaran Sakthievel
-
Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
Patent number: 6761796Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.Type: GrantFiled: July 13, 2001Date of Patent: July 13, 2004Assignee: Axcelis Technologies, Inc.Inventors: Aseem Kumar Srivastava, Herbert Harold Sawin, Palanikumaran Sakthievel -
Publication number: 20030185280Abstract: A contact measurement probe for measuring a temperature of a substrate in a process environment includes a probe head having a contact surface made of a ceramic material or a polymeric material for contacting the substrate. The contact measurement probe eliminates electrical biasing effects in process environments that include an ion source, thereby providing greater accuracy and reproducibility in temperature measurement.Type: ApplicationFiled: March 29, 2002Publication date: October 2, 2003Inventors: Michael Bruce Colson, Aseem Kumar Srivastava
-
Publication number: 20020144785Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.Type: ApplicationFiled: July 13, 2001Publication date: October 10, 2002Inventors: Aseem Kumar Srivastava, Herbert Harold Sawin, Palanikumaran Sakthievel
-
Patent number: 6031320Abstract: An apparatus for cooling an electrodeless lamp including a supersonic outlet jet for providing a stream of cooling gas. A common manifold including mounting elements for a plurality of conduits of equal length for transporting cooling gas, wherein the mounting elements are at staggered elevational positions so that the conduits provide cooling gas in the vicinity of lamp envelope at different elevational positions.Type: GrantFiled: January 27, 1998Date of Patent: February 29, 2000Inventors: Mohammad Kamarehi, Aseem Kumar Srivastava, Robert D. Wooten