Abstract: Methods and systems for on-die measuring jitter of a clock under test are presented. In an aspect, an apparatus comprises a delay line having a plurality of delay elements, the outputs of which are sampled at the expected transition time of the clock under test. The sampled outputs are provided to an edge detector that indicates the presence of the clock transition at a specific time, and a latching circuit stores a record of all the edge locations seen during a sampling window. In some aspects, a counting circuit counts and stores how many times the transition occurs at each specific time during the sampling window. The counts stored by the counting circuit provide histogram data that can be analyzed to determine the jitter characteristics of the clock under test.

Abstract: Methods and systems for on-die measuring jitter of a clock under test are presented. In an aspect, an apparatus comprises a delay line having a plurality of delay elements, the outputs of which are sampled at the expected transition time of the clock under test. The sampled outputs are provided to an edge detector that indicates the presence of the clock transition at a specific time, and a latching circuit stores a record of all the edge locations seen during a sampling window. In some aspects, a counting circuit counts and stores how many times the transition occurs at each specific time during the sampling window. The counts stored by the counting circuit provide histogram data that can be analyzed to determine the jitter characteristics of the clock under test.

Abstract: A transient voltage collapse circuit provides a reference voltage for an SRAM (static random access memory). The SRAM receives a first reference voltage and a second reference voltage higher than the first reference voltage. The transient voltage collapse circuit provides the first reference voltage to the SRAM via a voltage supply line. The transient voltage collapse circuit maintains the voltage supply line at a first voltage level during a power save mode of the SRAM. The transient voltage collapse circuit increases the voltage of the voltage supply line during a write operation of the SRAM. The increase in the voltage of the supply line reduces the gap between first reference voltage and the second reference voltage, thereby assisting with the write operation of the SRAM.

Abstract: A memory device biasing circuit is disclosed, the circuit having a pair of semiconductor devices coupled to receive a supply voltage having a supply voltage level suitable for operating a memory device in an active mode and operable for providing an adjustable biased voltage to the memory device that is greater than a minimal voltage level for operating the memory device in a data retention mode. The pair of semiconductor devices includes a first semiconductor device; and, a second semiconductor device that includes an opposite type of semiconductor device than the first semiconductor device such that the pair of semiconductor devices includes each of an N-type semiconductor device and a P-type semiconductor device. The memory device biasing circuit further includes a bias adjustment circuit coupled to the second semiconductor device and configured to adjust the operation of the second semiconductor device based on the supply voltage.

Abstract: A memory device biasing circuit is disclosed, the circuit having a pair of semiconductor devices coupled to receive a supply voltage having a supply voltage level suitable for operating a memory device in an active mode and operable for providing an adjustable biased voltage to the memory device that is greater than a minimal voltage level for operating the memory device in a data retention mode. The pair of semiconductor devices includes a first semiconductor device; and, a second semiconductor device that includes an opposite type of semiconductor device than the first semiconductor device such that the pair of semiconductor devices includes each of an N-type semiconductor device and a P-type semiconductor device. The memory device biasing circuit further includes a bias adjustment circuit coupled to the second semiconductor device and configured to adjust the operation of the second semiconductor device based on the supply voltage.