Patents by Inventor Ashok Chalaka

Ashok Chalaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with integrated RC network and schottky diode
    Patent number: 5770886
    Abstract: A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the series connection of the resistor and capacitor.
    Type: Grant
    Filed: February 7, 1996
    Date of Patent: June 23, 1998
    Assignee: California Micro Devices, Inc.
    Inventors: Bhasker Rao, Horst Leuschner, Ashok Chalaka
  • Method of making a semiconductor device with integrated RC network and schottky diode
    Patent number: 5514612
    Abstract: A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the series connection of the resistor and capacitor.
    Type: Grant
    Filed: July 28, 1994
    Date of Patent: May 7, 1996
    Assignee: California Micro Devices, Inc.
    Inventors: Bhasker Rao, Horst Leuschner, Ashok Chalaka
  • Semiconductor device with integrated RC network and Schottky diode
    Patent number: 5355014
    Abstract: A semiconductor device which has a resistor, a capacitor, and a Schottky diode all formed on a single semiconductor substrate. The capacitor comprises a dielectric region between two metal regions. The resistor comprises an N.sup.+ -type well. The Schottky diode comprises an N-type tub, a metal region in contact with the tub, and an N.sup.+ -type region formed in the N-type tub. The resistor and capacitor are coupled by a metal region which contacts one of the metal regions of the capacitor and the N.sup.+ -type well of the resistor. The resistor and Schottky diode are coupled by a metal region which contacts the N.sup.+ -type well of the resistor and the N.sup.+ -type well of the Schottky diode.
    Type: Grant
    Filed: March 3, 1993
    Date of Patent: October 11, 1994
    Inventors: Bhasker Rao, Horst Leuschner, Ashok Chalaka