Patents by Inventor Ashot Oganesyan

Ashot Oganesyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11940895
    Abstract: Computer-implemented methods and systems described herein perform intelligent sampling of application traces generated by an application. Computer-implemented methods and systems determine different sampling rates based on frequency of occurrence of trace types and/or frequency of occurrence of durations of the traces. Each sampling rate corresponds to a different trace type and/or different duration. The sampling rates for low frequency trace types and durations are larger than the sampling rates for high frequency trace types and durations. The relatively larger sampling rates for low frequency trace types and low frequency durations ensures that low frequency trace types and low frequency durations are sampled in sufficient numbers and are not passed over during sampling of the application traces. The set of sampled traces are stored in a data storage device.
    Type: Grant
    Filed: July 5, 2021
    Date of Patent: March 26, 2024
    Assignee: VMware LLC
    Inventors: Arnak Poghosyan, Ashot Nshan Harutyunyan, Naira Movses Grigoryan, Clement Pang, George Oganesyan, Karen Avagyan
  • Patent number: 5677539
    Abstract: A radiation detector for detecting ionizing radiation. The detector includes a semiconductor having at least two sides. A bias electrode is formed on one side of the semiconductor. A signal electrode is formed on a side of the semiconductor and is used to detect the energy level of the ionizing radiation. A third electrode (the control electrode) is also formed on the semiconductor. The control electrode shares charges induced by the ionizing radiation with the signal electrode, until the charge clouds are close to the signal electrode. The control electrode also alters the electric field within the semiconductor, such that the field guides the charge clouds toward the signal electrode when the clouds closely approach the signal electrode. As a result, trapping of charge carrying radiation (i.e., electrons or holes) is minimized, and low-energy tailing is virtually eliminated.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: October 14, 1997
    Assignee: Digirad
    Inventors: Boris Apotovsky, Clinton L. Lingren, Ashot Oganesyan, Bo Pi, Jack F. Butler, F. Patrick Doty, Richard L. Conwell, Stanley J. Friesenhahn