Abstract: The present disclosure relates to transfer apparatus, and related components and methods, for transferring substrates in relation to substrate processing operations for semiconductor manufacturing. In one implementation, a transfer apparatus for moving a substrate in relation to semiconductor manufacturing includes a body, and a plurality of substrate supports inserted at least partially into the body. Each of the plurality of substrate supports includes an inner segment, and one or more fins extending outwardly relative to the inner segment. Each of the inner segment and the one or more fins includes silicon carbide (SiC).

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

Abstract: The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing volume, a first window at a first perimeter of the processing volume, a substrate support within the processing volume; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximal the first window, and a second temperature at a second site proximal the substrate support.

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a disk and liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter less than the outer diameter of the quartz disk.

Abstract: Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one or more radiation sensors. Each lamp is identified with one or more zones, the radiation sensors are coupled to the chamber, where each radiation sensor is proximal at least one lamp. A controller contains instructions that, when executed, cause: the radiation sensors to convey, to the controller, information associated with radiation emitted by the lamps; the controller to analyze the information, the analyzing including: for each zone: determining a function of radiation over time; and monitoring the function for a condition associated with lamp aging; and the controller to, based on the analyzing the information, perform at least one of the following: vary input power delivered to the lamps; and generate an alert.

Abstract: Embodiments described herein relate to a susceptor kit. The susceptor kit includes a susceptor support plate including a plurality of susceptor lift pin holes and a plurality of susceptor support holes, a plurality of susceptor supports recessed within the plurality of susceptor support holes and coupled to the susceptor support plate, and a lift pin assembly. The plurality of susceptor supports receive a plurality of susceptor support pins. The support body supports the support pin link in a spaced apart relation to the susceptor support plate. The lift pin assembly is received in the plurality of susceptor lift pin holes. The lift pin assembly includes a lift pin cap and a susceptor lift pin comprising a susceptor stop plate. The susceptor support plate stop is receivable within the susceptor lift pin holes.

Abstract: An apparatus for heating a gas is described. The apparatus is a pre-heat ring and heater assembly positioned in a deposition chamber, such as an epitaxial deposition chamber. The pre-heat ring has a first portion configured to be heated using one or more heaters. The one or more heaters are disposed through a sidewall of the process volume beneath the pre-heat ring and are configured to heat the pre-heat ring so that gas flowed over the pre-heat ring is also heated before being flowed over a substrate. The one or more heaters may include two heaters disposed at distal ends of the first portion of the pre-heat ring. One or more temperature sensors are also configured to measure a temperature of the pre-heat ring.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

Abstract: A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resistive heating element. The internal heating elements are configured to heat a sensor coupon. A film is formed on the sensor coupon by exhaust gases flowed through the exhaust and is correlated to film growth on a substrate within a process volume of the deposition chamber.

Abstract: Processes for fusing opaque fused quartz to clear fused quartz to form ultraviolet light transmission windows comprise surrounding a clear fused quartz ingot with an opaque fused quartz sleeve or opaque fused quartz particles, then heating the clear and opaque fused quartz together in a furnace, past the transition temperature of the opaque fused quartz, in order to join the two types of quartz together around the perimeter of the clear fused quartz ingot, but without substantial mixing beyond the interface.

Abstract: In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 ?m.

Abstract: Processes for fusing opaque fused quartz to clear fused quartz to form ultraviolet light transmission windows comprise surrounding a clear fused quartz ingot with an opaque fused quartz sleeve or opaque fused quartz particles, then heating the clear and opaque fused quartz together in a furnace, past the transition temperature of the opaque fused quartz, in order to join the two types of quartz together around the perimeter of the clear fused quartz ingot, but without substantial mixing beyond the interface.

Abstract: In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 ?m.

Abstract: A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged.