Abstract: A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

Abstract: A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

Abstract: A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

Abstract: A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

Abstract: This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by predepositing specific amounts of insulating films such as silicon dioxide or silicon nitride on the other surface of the substrate. Substrates with predeposited insulators form insulating films much more slowly in a gas plasma than bare substrates and, after an initial fast growth phase, the insulator thickness reaches a steady growth phase. Because of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

Abstract: Plasma oxidation of the surface of a substrate which surface does not face towards the plasma is achieved by placing the substrate perpendicular to the plasma in a region at a pressure of at least about 10 mtorr.

Abstract: Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.