Abstract: The invention relates to a photoplethysmography (PPG) sensing device comprising—a pulsed light source, —at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel comprises: —a pinned photodiode (PPD) having two electronic connection nodes, —a sense node (SN), to convert the photo-generated electrons into a voltage, and—a Transfer Gate (TGtransfer) transistor, having its source electronically connected to one electronic connection node of said pinned photodiode (PPD), and being configured to act as a transfer gate (TG) between said pinned photodiode (PPD) and said sense node (SN), allowing the photo-generated electrons to sink when the light is pulsed-off, the photo-generated electrons integration when the light is pulsed-on and the transfer of at least part of the integrated photo-generated electrons to said sense node for a read-out.

Abstract: The invention relates to a photoplethysmography (PPG) sensing device comprising—a pulsed light source, —at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel comprises: —a pinned photodiode (PPD) having two electronic connection nodes, —a sense node (SN), to convert the photo-generated electrons into a voltage, and—a Transfer Gate (TGtransfer) transistor, having its source electronically connected to one electronic connection node of said pinned photodiode (PPD), and being configured to act as a transfer gate (TG) between said pinned photodiode (PPD) and said sense node (SN), allowing the photo-generated electrons to sink when the light is pulsed-off, the photo-generated electrons integration when the light is pulsed-on and the transfer of at least part of the integrated photo-generated electrons to said sense node for a read-out.

Abstract: The invention relates to a photoplethysmography (PPG) sensing device comprising —a pulsed light source, —at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel comprises: —a pinned photodiode (PPD) having two electronic connection nodes, —a sense node (SN), to convert the photo-generated electrons into a voltage, and —a Transfer Gate (TGtransfer) transistor, having its source electronically connected to one electronic connection node of said pinned photodiode (PPD), and being configured to act as a transfer gate (TG) between said pinned photodiode (PPD) and said sense node (SN), allowing the photo-generated electrons to sink when the light is pulsed-off, the photo-generated electrons integration when the light is pulsed-on and the transfer of at least part of the integrated photo-generated electrons to said sense node for a read-out.

Abstract: A ring for photoplethysmographic sensing performs transmissive PPG and/or reflective PPG. It can enable lower power consumption, higher fidelity, and/or greater versatility to different use cases and users' specificities. The PPG system takes advantage of sensor spatial diversity to enhance the quality and the reliability of the PPG measurements in smart rings, for example. It can also perform user identification.

Abstract: A cyclic analog to digital converter for digitizing an output from a photoplethysmography sensor has a buffer amplifier for setting a voltage of the feedback capacitance. Additionally, digital averaging circuit is preferably provided for averaging the digital output from the cyclic analog to digital converter for the several conversions. Finally, voting logic is additionally provided for declaring the digital bits based on successive comparisons by the one or more comparators.

Abstract: The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wave-length ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in each of the imaging layers an array of photodetecting regions is provided, wherein the photodetecting regions are configured with different absorption characteristics, wherein the imaging layers are stacked so that the photodetecting regions of the arrays are aligned, wherein the absorption characteristics allow a preferred absorption of light components of at least one predetermined wavelength range.

Abstract: An adaptive processing of the pulsatility signal can improve the pulse wave analysis (PWA) leading to a better blood pressure estimation. The technique is based on transforming the pulsatility signal so that the fiducial points required for the PWA are well-defined.

Abstract: A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of individual pixels contributing their photocarriers to a common sense node SN through a plurality of transistors in parallel. Preferably the integrated circuit includes switched capacitor circuits arranged to combine the potential of the sense nodes SN of a plurality of macro-pixels, and/or to perform correlated double samplings in an energy efficient way. Each pixel has now an additional sink gate (194) between the pinned photodetector, PPD, potential well and a positive voltage source. By this additional sink gate (194), the storage well of the PPDs can be emptied without transferring the charge to the sense node.

Abstract: A sensor employs an adaptive light-to-digital conversion (LDC) system for high background signal applications. The system adapts the LDC resolution and the power consumption depending on the signal to background ratio. This scheme is of particular interest to photoplethysmography (PPG). The system can have a set of light-to-digital converters in which each of the light-to-digital converters includes an array of pixels and an analog to digital converter for digitizing the output from the array of pixels. Switches are then used to connect each of the light-to-digital converters to a power supply to selectively activate each of the light-to-digital converters.

Abstract: A biomedical sensing module and system employs light steering and sensor spatial diversity to enhance the quality and reliability of its measurements. This is particularly relevant to earbuds. Indeed, unlike in a smartwatch, an earbud-based biomedical sensing system suffers from person-to-person physiological differences at the level of the ear canal. This makes it very complicated to engineer a biomedical platform fitting everybody's differences in ear anatomy.

Abstract: A stacked photoplethysmography (PPG) sensor for oximetry is capable of sensing simultaneously, with optimal area and quantum efficiency, PPG signals using a plurality of emission wavelengths without the need for time division multiplexing.

Abstract: The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: —a photodiode (11) for generating photoelectrons; —a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured to be controlled by a first control signal (TX1); —a gain reducing capacitance (CHD) applied on the intermediate node (IN); —a second transfer transistor (14) coupling the intermediate node (IN) with a sense node (SN) and configured to be controlled by a second control signal (TX2); —an output buffer (15) coupled with the sense node (SN) and configured to amplify a potential on the sense node (SN).

Abstract: An optical device for the in noninvasive determination of the concentration of glucose or another analyte in blood using a combination of Raman spectrometry and PPG. The device includes an optical detector, preferably a CMOS imager including pinned photodiodes (PPD) to collect a time-variable signal and a logic circuit arranged to determine a glucose concentration based on variations in the optical signal happening in a frequency range compatible with the cardiac rhythm.

Abstract: The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: —a photodiode (11) for generating photoelectrons; —a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured to be controlled by a first control signal (TX1); —a gain reducing capacitance (CHD) applied on the intermediate node (IN); —a second transfer transistor (14) coupling the intermediate node (IN) with a sense node (SN) and configured to be controlled by a second control signal (TX2); —an output buffer (15) coupled with the sense node (SN) and configured to amplify a potential on the sense node (SN).

Abstract: The invention relates to a photoplethysmography (PPG) sensing device comprising —a pulsed light source, —at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel comprises: —a pinned photodiode (PPD) having two electronic connection nodes, —a sense node (SN), to convert the photo-generated electrons into a voltage, and —a Transfer Gate (TGtransfer) transistor, having its source electronically connected to one electronic connection node of said pinned photodiode (PPD), and being configured to act as a transfer gate (TG) between said pinned photodiode (PPD) and said sense node (SN), allowing the photo-generated electrons to sink when the light is pulsed-off, the photo-generated electrons integration when the light is pulsed-on and the transfer of at least part of the integrated photo-generated electrons to said sense node for a read-out.

Abstract: A CMOS image sensor including at least one pixel and one circuit arranged to receive, on a first node of the circuit, an analog signal representative of the luminosity level received by the pixel, the circuit being capable of successively acquiring 2n samples of said signal, n being an integer greater than or equal to 1, and of delivering, on a second node of the circuit, an analog signal having a value equal to the average of the values of said samples, without generating an intermediate signal having a value greater than the value of the largest acquired sample.

Abstract: A method of acquiring an image of a scene illuminated by a first beam, by means of a sensor including at least two pixels, including the steps of: a) for each pixel, reading a first output value of the pixel representative of the intensity of the radiation received by the pixel during a first integration period during which the sensor is illuminated by a second beam coherent with the first beam; and b) for each pixel, reading a second output value of the pixel representative of the intensity of the radiation received by the pixel during a second integration period during which the sensor is not illuminated by the second beam, wherein steps a) and b) are repeated a plurality of times by changing, between two successive iterations, the angle of incidence or a phase parameter of the second beam.

Abstract: A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials.

Abstract: A CMOS image sensor including at least one pixel and one circuit arranged to receive, on a first node of the circuit, an analog signal representative of the luminosity level received by the pixel, the circuit being capable of successively acquiring 2n samples of said signal, n being an integer greater than or equal to 1, and of delivering, on a second node of the circuit, an analog signal having a value equal to the average of the values of said samples, without generating an intermediate signal having a value greater than the value of the largest acquired sample.

Abstract: A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials.