Abstract: A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.

Abstract: The composite sintered body includes Al2O3, and MgAl2O4. The content of Al2O3 in the composite sintered body is not less than 95.5% by weight. The average sintered grain size of Al2O3 in the composite sintered body is not less than 2 ?m and not greater than 4 ?m. The standard deviation of sintered grain size distribution of Al2O3 in the composite sintered body is not greater than 0.35. The bulk density of the composite sintered body is not less than 3.94 g/cm3 and not greater than 3.98 g/cm3. In the composite sintered body, the ratio of amount of crystal phase of MgAl2O4 to that of Al2O3 is not less than 0.003 and not greater than 0.01.

Abstract: A method of manufacturing a composite sintered body includes a step (Step S11) of molding mixed powder in which Al2O3, SiC, and MgO are mixed, into a green body having a predetermined shape and a step (Step S12) of generating a composite sintered body by sintering the green body. Then, in Step S11, the ratio of SiC to the mixed powder is not lower than 4.0 weight percentage and not higher than 13.0 weight percentage. Further, the purity of Al2O3 in Step S11 is not lower than 99.9%. It is thereby possible to suppress the abnormal grain growth of Al2O3 and suitably manufacture a composite sintered body having high relative dielectric constant and withstand voltage, and low tan ?.

Abstract: A composite sintered body includes a base material that contains Al2O3 as a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO2, and Al2O3.

Abstract: According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 ?m or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Abstract: A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.

Abstract: A composite sintered body includes a base material that contains Al2O3 as a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO2, and Al2O3.

Abstract: A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAl2O4 as main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

Abstract: According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 ?m or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Abstract: The composite sintered body includes Al2O3, and MgAl2O4. The content of Al2O3 in the composite sintered body is not less than 95.5% by weight. The average sintered grain size of Al2O3 in the composite sintered body is not less than 2 ?m and not greater than 4 ?m. The standard deviation of sintered grain size distribution of Al2O3 in the composite sintered body is not greater than 0.35. The bulk density of the composite sintered body is not less than 3.94 g/cm3 and not greater than 3.98 g/cm3. In the composite sintered body, the ratio of amount of crystal phase of MgAl2O4 to that of Al2O3 is not less than 0.003 and not greater than 0.01.

Abstract: A method of manufacturing a composite sintered body includes a step (Step S11) of molding mixed powder in which Al2O3, SiC, and MgO are mixed, into a green body having a predetermined shape and a step (Step S12) of generating a composite sintered body by sintering the green body. Then, in Step S11, the ratio of SiC to the mixed powder is not lower than 4.0 weight percentage and not higher than 13.0 weight percentage. Further, the purity of Al2O3 in Step S11 is not lower than 99.9%. It is thereby possible to suppress the abnormal grain growth of Al2O3 and suitably manufacture a composite sintered body having high relative dielectric constant and withstand voltage, and low tan ?.

Abstract: A member for a semiconductor manufacturing apparatus according to the present invention is a member that is to be joined to an aluminum nitride base member. The member is composed of a composite material including principal constituent phases that are aluminum nitride and a pseudopolymorph of aluminum nitride which includes silicon, aluminum, oxygen, and nitrogen. The pseudopolymorph of aluminum nitride has at least one periodic structure selected from a 27R phase and a 21R phase or an X-ray diffraction peak at least at 2?=59.8° to 60.8°. The composite material has a thermal conductivity of 50 W/mK or less at room temperature.

Abstract: A member for a semiconductor manufacturing apparatus according to the present invention is a member that is to be joined to an aluminum nitride base member. The member is composed of a composite material including principal constituent phases that are aluminum nitride and a pseudopolymorph of aluminum nitride which includes silicon, aluminum, oxygen, and nitrogen. The pseudopolymorph of aluminum nitride has at least one periodic structure selected from a 27R phase and a 21R phase or an X-ray diffraction peak at least at 2?=59.8° to 60.8°. The composite material has a thermal conductivity of 50 W/mK or less at room temperature.