Patents by Inventor Atikur Rahman
Atikur Rahman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230405936Abstract: Commercial additive manufacturing with continuous reinforcement produces parts with low fiber volume fraction and limited printing parameters. Mechanical properties of 3D printed products are improved with high fiber volume fraction. This technology solves, at least, the problem of undetected print fails of currently available technology. Applicator engineering solves the issue of poor interlaminar adhesion. The incorporation of elevated temperature control and real-time monitoring helps solve dimensional errors that happen due to postcuring. This technology mitigates and prevents print failures which will save time and material and improve printing efficiency. Ultrasonic vibration reduces the void in the print by better dispersion of resin.Type: ApplicationFiled: June 21, 2023Publication date: December 21, 2023Inventors: Chad Ulven, MD Atikur Rahman, Md. Zahirul Islam, Luke R. Gibbon
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Publication number: 20220402754Abstract: Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: July 6, 2022Publication date: December 22, 2022Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Patent number: 11390518Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: December 8, 2020Date of Patent: July 19, 2022Assignee: Brookhaven Science Associates, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Publication number: 20210094821Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: December 8, 2020Publication date: April 1, 2021Inventors: Charles T. BLACK, Atikur RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
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Patent number: 10882739Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: September 6, 2018Date of Patent: January 5, 2021Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC.Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Patent number: 10290507Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: June 13, 2014Date of Patent: May 14, 2019Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Publication number: 20190109011Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.Type: ApplicationFiled: December 5, 2018Publication date: April 11, 2019Inventors: Antonio Checco, Benjamin M. Ocko, Atikur Rahman, Charles T. Black
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Patent number: 10189704Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.Type: GrantFiled: June 13, 2014Date of Patent: January 29, 2019Assignee: Brookhaven Science Associates, LLCInventors: Antonio Checco, Charles T. Black, Atikur Rahman, Benjamin M. Ocko
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Publication number: 20160139302Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: June 13, 2014Publication date: May 19, 2016Applicant: Brookhaven Science Associates, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Publication number: 20160137799Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.Type: ApplicationFiled: June 13, 2014Publication date: May 19, 2016Inventors: Antonio Checco, Charles T. Black, Atikur Rahman, Benjamin M. Ocko