Patents by Inventor Atsuhiro Tsukune
Atsuhiro Tsukune has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9704740Abstract: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.Type: GrantFiled: October 27, 2016Date of Patent: July 11, 2017Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hirosato Ochimizu, Atsuhiro Tsukune, Hiroshi Kudo
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Publication number: 20170047246Abstract: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.Type: ApplicationFiled: October 27, 2016Publication date: February 16, 2017Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hirosato OCHIMIZU, Atsuhiro TSUKUNE, Hiroshi KUDO
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Patent number: 8916468Abstract: A transistor formed on a semiconductor substrate is covered with a first insulating film, and first conductive vias which pierce the first insulating film and which reach the transistor and a second conductive via which pierces the first insulating film and which reaches an inside of the semiconductor substrate are formed. After the formation of the first conductive vias and the second conductive via, a second insulating film is formed over the first insulating film. Conducive portions connected to the first conductive vias leading to the transistor and a conductive portion connected to the second conductive via which reaches the inside of the semiconductor substrate are formed in the second insulating film. By doing so, a multilayer interconnection is formed.Type: GrantFiled: June 6, 2013Date of Patent: December 23, 2014Assignee: Fujitsu Semiconductor LimitedInventors: Hirosato Ochimizu, Atsuhiro Tsukune
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Publication number: 20140353829Abstract: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.Type: ApplicationFiled: August 14, 2014Publication date: December 4, 2014Inventors: Hirosato OCHIMIZU, Atsuhiro TSUKUNE, Hiroshi KUDO
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Patent number: 8836126Abstract: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.Type: GrantFiled: August 4, 2009Date of Patent: September 16, 2014Assignee: Fujitsu Semiconductor LimitedInventors: Hirosato Ochimizu, Atsuhiro Tsukune, Hiroshi Kudo
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Publication number: 20130273701Abstract: A transistor formed on a semiconductor substrate is covered with a first insulating film, and first conductive vias which pierce the first insulating film and which reach the transistor and a second conductive via which pierces the first insulating film and which reaches an inside of the semiconductor substrate are formed. After the formation of the first conductive vias and the second conductive via, a second insulating film is formed over the first insulating film. Conducive portions connected to the first conductive vias leading to the transistor and a conductive portion connected to the second conductive via which reaches the inside of the semiconductor substrate are formed in the second insulating film. By doing so, a multilayer interconnection is formed.Type: ApplicationFiled: June 6, 2013Publication date: October 17, 2013Inventors: Hirosato Ochimizu, Atsuhiro Tsukune
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Publication number: 20100038792Abstract: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.Type: ApplicationFiled: August 4, 2009Publication date: February 18, 2010Applicant: FUJITSU MICROELECTRONICS LIMITEDInventors: Hirosato OCHIMIZU, Atsuhiro Tsukune, Hiroshi Kudo
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Patent number: 6635523Abstract: The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconductor film by causing a tungsten compound gas to react with the semiconductor film, forming a tungsten nitride film by nitriding a surface of the tungsten film by using a nitrogen gas or a nitrogen containing gas, forming a capacitor dielectric film made of oxygen compound on the tungsten nitride film, annealing the capacitor dielectric film in an oxygen containing gas, and forming a capacitor upper electrode made of a conductive film on the capacitor dielectric film.Type: GrantFiled: December 3, 1998Date of Patent: October 21, 2003Assignee: Fujitsu LimitedInventors: Yuji Uchiyama, Toshiya Suzuki, Atsuhiro Tsukune, Takae Sukegawa
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Patent number: 6344363Abstract: A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.Type: GrantFiled: August 28, 1998Date of Patent: February 5, 2002Assignee: Fujitsu LimitedInventors: Rika Shinohara, Atsuhiro Tsukune, Hiroshi Kudo
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Patent number: 5609721Abstract: An apparatus and method for manufacturing a semiconductor device includes a reaction chamber adapted to exhaust gas therefrom, and a cleaning gas supplying system for introducing cleaning gas containing ClF.sub.3 into the reaction chamber, the system having a plurality of gas blowout holes formed in the flow direction of gas at least in the reaction chamber. The reaction chamber may be a tubular chamber, and the cleaning gas supplying system may be a tube extending from one end to the other end of the reaction chamber along the inner wall or the central axis of the reaction chamber, a plurality of through holes being formed in the side wall of the tube. Damages to the inner surface of the reaction chamber of the semiconductor device manufacturing apparatus can be suppressed and a film attached to the inner wall of the reaction chamber can be removed in a short time.Type: GrantFiled: January 3, 1995Date of Patent: March 11, 1997Assignee: Fujitsu LimitedInventors: Atsuhiro Tsukune, Kiyokatsu Suzuki, Katsuyoshi Matsuura, Fumitake Mieno, Hirokazu Yamanishi
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Patent number: 5233163Abstract: A heating apparatus for use in heating a substrate comprises an electric heater and a power supply part. The electric heater is made up of an approximately columnar body which is made of graphite, and this columnar body has a top with a flat surface part on which the substrate is placed and a pair of legs which extend downwardly from the flat surface part. The legs are defined by an opening in the columnar body. The power supplying part is coupled to the electric heater and supplies a voltage across the legs of the columnar body so that a current flows from one leg to the other, thereby generating heat at the flat surface part to heat the substrate.Type: GrantFiled: July 3, 1991Date of Patent: August 3, 1993Assignee: Fujitsu LimitedInventors: Fumitake Mieno, Yuji Furumura, Atsuhiro Tsukune, Hiroshi Miyata
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Patent number: 5041311Abstract: A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.Type: GrantFiled: March 9, 1990Date of Patent: August 20, 1991Assignee: Fujitsu LimitedInventors: Atsuhiro Tsukune, Kenji Koyama
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Patent number: 4804560Abstract: A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface.Type: GrantFiled: March 17, 1987Date of Patent: February 14, 1989Assignee: Fujitsu LimitedInventors: Yoshimi Shioya, Yasushi Oyama, Norihisa Tsuzuki, Mamoru Maeda, Masaaki Ichikawa, Fumitake Mieno, Shin-ichi Inoue, Yasuo Uo-ochi, Akira Tabuchi, Atsuhiro Tsukune, Takuya Watanabe, Takayuki Ohba
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Patent number: 4781945Abstract: A coating of phosphosilicate glass is deposited on a substrate by a chemical vapor deposition method, using a reaction gas consisting of monosilane, phosphine, and oxygen, in admixture with ammonia gas. According to this deposition process, the undesirable formation and adhesion of particulate by-products such as SiO.sub.2, P.sub.2 O.sub.5, and H.sub.2 SiO.sub.3 to the substrate surface can be effectively prevented, and the step coverage can be improved.Type: GrantFiled: June 23, 1987Date of Patent: November 1, 1988Assignee: Fujitsu LimitedInventors: Masahide Nishimura, Kanetake Takasaki, Kenji Koyama, Atsuhiro Tsukune