Patents by Inventor Atsuko Uemoto

Atsuko Uemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier gate type field effect transistor
    Patent number: 5229625
    Abstract: The semiconductor device somprises a silicon substrate, a boron-doped high resistant silicon carbide layer formed on said silicon substrate and a silicon carbide layer formed on said high resistant silicon carbide layer.
    Type: Grant
    Filed: September 25, 1991
    Date of Patent: July 20, 1993
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akira Suzuki, Katsuki Furukawa, Akitsugu Hatano, Atsuko Uemoto
  • Electrode structure for silicon carbide semiconductors
    Patent number: 4990994
    Abstract: An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.
    Type: Grant
    Filed: September 5, 1989
    Date of Patent: February 5, 1991
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Katsuki Furukawa, Akira Suzuki, Mitsuhiro Shigeta, Atsuko Uemoto
  • Semiconductor device
    Patent number: 4897710
    Abstract: The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.
    Type: Grant
    Filed: August 18, 1987
    Date of Patent: January 30, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akira Suzuki, Katsuki Furukawa, Akitsugu Hatano, Atsuko Uemoto
  • Heteroepitaxial growth of SiC on Si
    Patent number: 4865659
    Abstract: A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.
    Type: Grant
    Filed: November 24, 1987
    Date of Patent: September 12, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Mitsuhiro Shigeta, Akira Suzuki, Katsuki Furukawa, Yoshihisa Fujii, Akitsugu Hatano, Atsuko Uemoto, Kenji Nakanishi